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International Rectifier Electronic Components Datasheet

FC40SA50FK Datasheet

HEXFET Power MOSFET

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I27139- 01/03
FC40SA50FK
Applications
! Switch Mode Power Supply (SMPS)
! Uninterruptible Power Supply
! High Speed Power Switching
! Hard Switched and High Frequency Circuits
VDSS
500V
HEXFET® Power MOSFET
RDS(on) typ.
0.084
ID
40A
Benefits
! Low Gate Charge Qg results in Simple
Drive Requirement
! Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
! Fully Characterized Capacitance and
Avalanche Voltage and Current
! Low RDS(on)
! Fully Insulated Package
SOT-227
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current "
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt #
Operating Junction and
Storage Temperature Range
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy$
Avalanche Current"
Repetitive Avalanche Energy"
Thermal Resistance
Symbol
RθJC
RθCS
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Max.
40
26
160
430
3.45
± 30
9.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Typ.
Typ.
0.05
Max.
1240
40
43
Units
mJ
A
mJ
Max.
0.29
Units
°C/W
www.irf.com
1


International Rectifier Electronic Components Datasheet

FC40SA50FK Datasheet

HEXFET Power MOSFET

No Preview Available !

www.DataSheet4U.com
I27139- 01/03
FC40SA50FK
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS Gate-to-Source Reverse Leakage
500 – –
V VGS = 0V, ID = 250µA
– 0.60 – V/°C Reference to 25°C, ID = 1mA(
– 0.084 0.10 VGS = 10V, ID = 24A %
3.0 – 5.0 V VDS = VGS, ID = 250µA
– – 50 µA VDS = 500V, VGS = 0V
– – 250
VDS = 400V, VGS = 0V, TJ = 125°C
– – 250 nA VGS = 30V
– – -250
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
23 – –
– – 270
– – 84
– – 130
– 25 –
– 140 –
– 55 –
– 74 –
– 8310 –
– 960 –
– 120 –
– 10170 –
– 240 –
– 440 –
S VDS = 50V, ID = 28A
ID = 40A
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13 %
VDD = 250V
ns ID = 40A
RG = 1.0
VGS = 10V,See Fig. 10 %
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 480V '
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) "
– – 40
MOSFET symbol
D
showing the
– – 160 A integral reverse
G
p-n junction diode.
S
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
––1
V TJ = 25°C, IS = 40A, VGS = 0V %
– 620 940 ns TJ = 25°C, IF = 47A
di/dt = 100A/µs %
µC
– 14 21
IRRM
Reverse Recovery Current
ton Forward Turn-On Time
Notes:
" Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
$ Starting TJ = 25°C, L = 1.55mH, RG = 25,
IAS = 40A, dv/dt =5.5V/ns (See Figure 12a)
# ISD 40A, di/dt 150A/µs, VDD V(BR)DSS,
TJ 150°C
2
– 38 -
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
% Pulse width 300µs; duty cycle 2%.
' Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
www.irf.com


Part Number FC40SA50FK
Description HEXFET Power MOSFET
Maker International Rectifier
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