International Rectifier Electronic Components Datasheet

FI4019HG Datasheet

Digital Audio MOSFET

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PD - 96274

IRFI4019HG-117P

DIGITAL AUDIO MOSFET

Features

Integrated Half-Bridge Package

Reduces the Part Count by Half

Facilitates Better PCB Layout

Key Parameters Optimized for Class-D

Audio Amplifier Applications

Low RDS(ON) for Improved Efficiency

Low Qg and Qsw for Better THD and

Improved Efficiency

Low Qrr for Better THD and Lower EMI

Can Delivery up to 200W per Channel into

8Ω Load in Half-Bridge Configuration

Amplifier

Lead-Free Package

Halogen-Free

hKey Parameters

VDS

RDS(ON) typ. @ 10V

Qg typ.

Qsw typ.

RG(int) typ.

TJ max

150

4.1

2.5

150

Ω

°C

S1/D2

TO-220 Full-Pak 5 PIN

G1, G2

D1, D2

S1, S2

Description

Gate

Drain

Source

This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It

consists of two power MosFET switches connected in half-bridge configuration. The latest process is used

to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and

internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such

as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable

device for Class D audio amplifier applications.

hAbsolute Maximum Ratings

VDS

VGS

ID @ TC = 25°C

ID @ TC = 100°C

IDM

EAS

PD @TC = 25°C

PD @TC = 100°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, VGS @ 10V

cPulsed Drain Current

dSingle Pulse Avalanche Energy

fPower Dissipation

Max.

150

±20

8.7

6.2

7.2

Units

Linear Derating Factor

TSTG

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

hThermal Resistance

0.15

-55 to + 150

300

x x10lb in (1.1N m)

W/°C

°C

Parameter

fRθJC

Junction-to-Case

fRθJA Junction-to-Ambient

Notes through are on page 2

www.irf.com

Typ.

–––

Max.

6.9

Units

10/08/09

International Rectifier Electronic Components Datasheet

FI4019HG Datasheet

Digital Audio MOSFET

No Preview Available !

IRFI4019HG-117P

hElectrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

Drain-to-Source Breakdown Voltage

150 ––– ––– V VGS = 0V, ID = 250µA

∆ΒVDSS/∆TJ

RDS(on)

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

e––– 0.19 ––– V/°C Reference to 25°C, ID = 1mA

––– 80

95 mΩ VGS = 10V, ID = 5.2A

VGS(th)

∆VGS(th)/∆TJ

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

3.0 ––– 4.9

V VDS = VGS, ID = 50µA

––– -11 ––– mV/°C

IDSS

Drain-to-Source Leakage Current

––– ––– 20

µA VDS = 150V, VGS = 0V

––– ––– 250

VDS = 150V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 100 nA VGS = 20V

Gate-to-Source Reverse Leakage

––– ––– -100

VGS = -20V

gfs Forward Transconductance

11 ––– ––– S VDS = 50V, ID = 5.2A

Qg Total Gate Charge

––– 13 20

Qgs1

Pre-Vth Gate-to-Source Charge

––– 3.3 –––

VDS = 75V

Qgs2

Post-Vth Gate-to-Source Charge

––– 0.8 ––– nC VGS = 10V

Qgd Gate-to-Drain Charge

––– 3.9 –––

ID = 5.2A

Qgodr

Gate Charge Overdrive

––– 5.0 –––

See Fig. 6 and 19

Qsw Switch Charge (Qgs2 + Qgd)

––– 4.1 –––

RG(int)

td(on)

Internal Gate Resistance

Turn-On Delay Time

––– 2.5 –––

––– 7.0 –––

Ω

ÃeVDD = 75V, VGS = 10V

td(off)

Rise Time

Turn-Off Delay Time

––– 6.6 –––

ID = 5.2A

––– 13 ––– ns RG = 2.4Ω

tf Fall Time

––– 3.1 –––

Ciss Input Capacitance

––– 810 –––

VGS = 0V

Coss Output Capacitance

––– 100 ––– pF VDS = 25V

Crss

Reverse Transfer Capacitance

––– 15 –––

ƒ = 1.0MHz,

See Fig.5

Coss Effective Output Capacitance

––– 97 –––

VGS = 0V, VDS = 0V to 120V

LD Internal Drain Inductance

––– 4.5 –––

Between lead,

LS Internal Source Inductance

nH 6mm (0.25in.)

––– 7.5 –––

from package

and center of die contact

hDiode Characteristics

Parameter

IS @ TC = 25°C Continuous Source Current

(Body Diode)

ISM Pulsed Source Current

Ã(Body Diode)

VSD Diode Forward Voltage

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

Min.

–––

Typ.

–––

140

Max. Units

Conditions

8.7 MOSFET symbol

A showing the

34 integral reverse

p-n junction diode.

e1.3 V TJ = 25°C, IS = 5.2A, VGS = 0V

e86 ns TJ = 25°C, IF = 5.2A

210 nC di/dt = 100A/µs

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Starting TJ = 25°C, L = 5.8mH, RG = 25Ω, IAS = 5.2A.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Rθ is measured at TJ of approximately 90°C.

Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive

avalanche information

Specifications refer to single MosFET.

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FI4019HG Datasheet

Digital Audio MOSFET

FI4019HG Datasheet

Digital Audio MOSFET

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