FI4019HG Datasheet | International Rectifier

Features Ÿ Integrated Half-Bridge Package Ÿ Reduces the Part Count by Half Ÿ Facilitates Better PCB Layout Ÿ Key Parameters Optimized for Class-D Audio Amplifier Applications Ÿ Low RDS(ON) for Improved Efficiency Ÿ Low Qg and Qsw for Better THD and Improved Efficiency Ÿ Low Qrr for Better THD and Lower EMI Ÿ Can Delivery up to 200W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier Ÿ Lead-Free Package Ÿ Halogen-Free h Key Parameters VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max 150 80 13 4.1 2.5 150 V m: n C n C Ω °C D1 G1 S1/D2 G2 S2 TO-220 Full-Pak 5 PIN G1, G2 D1, D2 S1, S2 Description Gate Drain Source This Digital Audio Mos FET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power Mos FET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance...