900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




International Rectifier Electronic Components Datasheet

FI4019HG Datasheet

Digital Audio MOSFET

No Preview Available !

PD - 96274
IRFI4019HG-117P
DIGITAL AUDIO MOSFET
Features
Ÿ Integrated Half-Bridge Package
Ÿ Reduces the Part Count by Half
Ÿ Facilitates Better PCB Layout
Ÿ Key Parameters Optimized for Class-D
Audio Amplifier Applications
Ÿ Low RDS(ON) for Improved Efficiency
Ÿ Low Qg and Qsw for Better THD and
Improved Efficiency
Ÿ Low Qrr for Better THD and Lower EMI
Ÿ Can Delivery up to 200W per Channel into
8Load in Half-Bridge Configuration
Amplifier
Ÿ Lead-Free Package
Ÿ Halogen-Free
hKey Parameters
VDS
RDS(ON) typ. @ 10V
Qg typ.
Qsw typ.
RG(int) typ.
TJ max
150
80
13
4.1
2.5
150
V
m:
nC
nC
°C
D1
G1
S1/D2
G2
S2
TO-220 Full-Pak 5 PIN
G1, G2
D1, D2
S1, S2
Description
Gate
Drain
Source
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and
internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such
as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable
device for Class D audio amplifier applications.
hAbsolute Maximum Ratings
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
EAS
PD @TC = 25°C
PD @TC = 100°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
dSingle Pulse Avalanche Energy
fPower Dissipation
fPower Dissipation
Max.
150
±20
8.7
6.2
34
77
18
7.2
Units
V
A
mJ
W
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
hThermal Resistance
0.15
-55 to + 150
300
x x10lb in (1.1N m)
W/°C
°C
Parameter
fRθJC
Junction-to-Case
fRθJA Junction-to-Ambient
Notes  through † are on page 2
www.irf.com
Typ.
–––
–––
Max.
6.9
65
Units
1
10/08/09


International Rectifier Electronic Components Datasheet

FI4019HG Datasheet

Digital Audio MOSFET

No Preview Available !

IRFI4019HG-117P
hElectrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
150 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/TJ
RDS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
e––– 0.19 ––– V/°C Reference to 25°C, ID = 1mA
––– 80
95 mVGS = 10V, ID = 5.2A
VGS(th)
VGS(th)/TJ
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
3.0 ––– 4.9
V VDS = VGS, ID = 50µA
––– -11 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 20
µA VDS = 150V, VGS = 0V
––– ––– 250
VDS = 150V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
11 ––– ––– S VDS = 50V, ID = 5.2A
Qg Total Gate Charge
––– 13 20
Qgs1
Pre-Vth Gate-to-Source Charge
––– 3.3 –––
VDS = 75V
Qgs2
Post-Vth Gate-to-Source Charge
––– 0.8 ––– nC VGS = 10V
Qgd Gate-to-Drain Charge
––– 3.9 –––
ID = 5.2A
Qgodr
Gate Charge Overdrive
––– 5.0 –––
See Fig. 6 and 19
Qsw Switch Charge (Qgs2 + Qgd)
––– 4.1 –––
RG(int)
td(on)
Internal Gate Resistance
Turn-On Delay Time
––– 2.5 –––
––– 7.0 –––
ÃeVDD = 75V, VGS = 10V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 6.6 –––
ID = 5.2A
––– 13 ––– ns RG = 2.4
tf Fall Time
––– 3.1 –––
Ciss Input Capacitance
––– 810 –––
VGS = 0V
Coss Output Capacitance
––– 100 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 15 –––
ƒ = 1.0MHz,
See Fig.5
Coss Effective Output Capacitance
––– 97 –––
VGS = 0V, VDS = 0V to 120V
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
and center of die contact
S
hDiode Characteristics
Parameter
IS @ TC = 25°C Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
57
140
Max. Units
Conditions
8.7 MOSFET symbol
A showing the
34 integral reverse
p-n junction diode.
e1.3 V TJ = 25°C, IS = 5.2A, VGS = 0V
e86 ns TJ = 25°C, IF = 5.2A
210 nC di/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 5.8mH, RG = 25, IAS = 5.2A.
ƒ Pulse width 400µs; duty cycle 2%.
2
„ Rθ is measured at TJ of approximately 90°C.
… Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information
† Specifications refer to single MosFET.
www.irf.com


Part Number FI4019HG
Description Digital Audio MOSFET
Maker International Rectifier
Total Page 7 Pages
PDF Download

FI4019HG Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 FI4019HG Digital Audio MOSFET
International Rectifier





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy