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International Rectifier Electronic Components Datasheet

FR3707Z Datasheet

IRFR3707Z

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Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
www.DataSheet4U.com l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
PD - 94648
IRFR3707Z
IRFU3707Z
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
30V 9.5m: 9.6nC
D-Pak
IRFR3707Z
I-Pak
IRFU3707Z
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™Pulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
PD @TC = 100°C Maximum Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Notes  through … are on page 11
www.irf.com
Max.
30
± 20
56f
39f
220
50
25
0.33
-55 to + 175
300 (1.6mm from case)
Typ.
–––
–––
–––
Max.
3.0
50
110
Units
V
A
W
W/°C
°C
Units
°C/W
1
04/03/03


International Rectifier Electronic Components Datasheet

FR3707Z Datasheet

IRFR3707Z

No Preview Available !

IRFR/U3707Z
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
www.DataSheet4U.com VGS(th)/TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
30
–––
–––
–––
1.35
–––
–––
0.023
7.5
10
1.80
-5.0
–––
–––
9.5
12.5
2.25
–––
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
emVGS = 10V, ID = 15A
eVGS = 4.5V, ID = 12A
V VDS = VGS, ID = 250µA
mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0 µA VDS = 24V, VGS = 0V
––– ––– 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
71 ––– –––
––– 9.6 14
––– 2.6 –––
––– 0.90 –––
––– 3.5 –––
––– 2.6 –––
S VDS = 15V, ID = 12A
VDS = 15V
nC VGS = 4.5V
ID = 12A
See Fig. 16
Qsw Switch Charge (Qgs2 + Qgd)
––– 4.4 –––
Qoss
td(on)
tr
td(off)
tf
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– 5.8 ––– nC VDS = 15V, VGS = 0V
––– 8.0 –––
eVDD = 16V, VGS = 4.5V
––– 11 –––
ID = 12A
––– 12 ––– ns Clamped Inductive Load
––– 3.3 –––
Ciss Input Capacitance
––– 1150 –––
VGS = 0V
Coss Output Capacitance
––– 260 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 120 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
ÙIAR Avalanche Current
™EAR Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
42
12
5.0
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
2
fMin. Typ. Max. Units
Conditions
––– ––– 56
MOSFET symbol
D
––– ––– 220
A showing the
integral reverse
G
––– ––– 1.0
––– 25 38
––– 17 26
p-n junction diode.
S
eV TJ = 25°C, IS = 12A, VGS = 0V
ens TJ = 25°C, IF = 12A, VDD = 15V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com


Part Number FR3707Z
Description IRFR3707Z
Maker International Rectifier
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FR3707Z Datasheet PDF






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