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FR3707Z - IRFR3707Z

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  • y; Q  +  oss × Vin × f + (Qrr × Vin × f )   2.
  • dissipated primarily in Q1. Ploss = (Irms × Rds(on ) ) 2    Qgs 2 Qgd +I× × Vin × f  +  I × × Vin × ig ig    + (Qg × Vg × f ) +  Qoss × Vin × f   2   f  This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub.

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PD - 94648 www.DataSheet4U.com Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current HEXFET® Power MOSFET IRFR3707Z IRFU3707Z Qg 9.6nC 9.5m: VDSS RDS(on) max 30V D-Pak IRFR3707Z I-Pak IRFU3707Z Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ± 20 56 39 Units V A ™ f f 220 50 25 0.33 -55 to + 175 300 (1.
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