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International Rectifier Electronic Components Datasheet

FS23N15D Datasheet

SMPS MOSFET

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PD - 93894A
SMPS MOSFET
IRFB23N15D
IRFS23N15D
IRFSL23N15D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
150V
RDS(on) max
0.090
ID
23A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB23N15D
D2Pak
TO-262
IRFS23N15D IRFSL23N15D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Max.
23
17
92
3.8
136
0.9
± 30
4.1
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typical SMPS Topologies
l Telecom 48V input DC-DC Active Clamp Reset Forward Converter
Units
A
W
W/°C
V
V/ns
°C
Notes  through ‡ are on page 11
www.irf.com
1
6/29/00


International Rectifier Electronic Components Datasheet

FS23N15D Datasheet

SMPS MOSFET

No Preview Available !

www.DataSheet4U.net
IRFB/IRFS/IRFSL23N15D
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS Gate-to-Source Reverse Leakage
150
–––
–––
3.0
–––
–––
–––
–––
––– ––– V VGS = 0V, ID = 250µA
0.18 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.090 VGS = 10V, ID = 14A „
––– 5.5 V VDS = VGS, ID = 250µA
––– 25
––– 250
µA VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
––– 100 nA VGS = 30V
––– -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
Coss Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
11 ––– –––
––– 37 56
––– 9.6 14
––– 19 29
––– 10 –––
––– 32 –––
––– 18 –––
––– 8.4 –––
––– 1200 –––
––– 260 –––
––– 65 –––
––– 1520 –––
––– 120 –––
––– 210 –––
S VDS = 25V, ID = 14A
ID = 14A
nC VDS = 120V
VGS = 10V, „
VDD = 75V
ns ID = 14A
RG = 5.1
VGS = 10V „
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz†
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V …
Parameter
Typ.
Max.
Units
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
––– 260 mJ
––– 14 A
––– 13.6 mJ
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface †
RθJA
Junction-to-Ambient†
RθJA
Junction-to-Ambient‡
Diode Characteristics
–––
0.50
–––
–––
1.1
––– °C/W
62
40
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
––– ––– 23
––– ––– 92
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
VSD Diode Forward Voltage
––– ––– 1.3 V TJ = 25°C, IS = 14A, VGS = 0V „
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
––– 150 220 ns TJ = 25°C, IF = 14A
––– 0.8 1.2 µC di/dt = 100A/µs „
ton Forward Turn-On Time
2
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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Part Number FS23N15D
Description SMPS MOSFET
Maker International Rectifier
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FS23N15D Datasheet PDF






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