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International Rectifier Electronic Components Datasheet

FS23N15D Datasheet

SMPS MOSFET

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PD - 95535
SMPS MOSFET
IRFB23N15DPbF
IRFS23N15DPbF
IRFSL23N15DPbF
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
VDSS RDS(on) max
ID
150V
0.090
23A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB23N15D
D2Pak
TO-262
IRFS23N15D IRFSL23N15D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Max.
23
17
92
3.8
136
0.9
± 30
4.1
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typical SMPS Topologies
l Telecom 48V input DC-DC Active Clamp Reset Forward Converter
Units
A
W
W/°C
V
V/ns
°C
Notes  through ‡ are on page 11
www.irf.com
1
7/20/04


International Rectifier Electronic Components Datasheet

FS23N15D Datasheet

SMPS MOSFET

No Preview Available !

IRFB/IRFS/IRFSL23N15DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
150
–––
–––
3.0
––– –––
0.18 –––
––– 0.090
––– 5.5
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 14A „
V VDS = VGS, ID = 250µA
––– ––– 25 µA VDS = 150V, VGS = 0V
––– ––– 250
VDS = 120V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 30V
––– ––– -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
11 ––– –––
Qg
Total Gate Charge
––– 37 56
Qgs
Gate-to-Source Charge
––– 9.6 14
Qgd
Gate-to-Drain ("Miller") Charge
––– 19 29
td(on)
Turn-On Delay Time
––– 10 –––
tr
Rise Time
––– 32 –––
td(off)
Turn-Off Delay Time
––– 18 –––
tf
Fall Time
––– 8.4 –––
Ciss
Input Capacitance
––– 1200 –––
Coss
Output Capacitance
––– 260 –––
Crss
Reverse Transfer Capacitance
––– 65 –––
Coss
Output Capacitance
––– 1520 –––
Coss
Output Capacitance
––– 120 –––
Coss eff. Effective Output Capacitance
Avalanche Characteristics
––– 210 –––
Units
S
nC
ns
pF
Conditions
VDS = 25V, ID = 14A
ID = 14A
VDS = 120V
VGS = 10V, „
VDD = 75V
ID = 14A
RG = 5.1
VGS = 10V „
VGS = 0V
VDS = 25V
ƒ = 1.0MHz†
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V …
Parameter
EAS
Single Pulse Avalanche Energy‚
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Thermal Resistance
Typ.
–––
–––
–––
Max.
260
14
13.6
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface †
RθJA
Junction-to-Ambient†
RθJA
Junction-to-Ambient‡
Diode Characteristics
–––
1.1
0.50
–––
°C/W
–––
62
–––
40
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
MOSFET symbol
D
––– ––– 23
A showing the
––– ––– 92
integral reverse
G
p-n junction diode.
S
VSD
Diode Forward Voltage
––– ––– 1.3 V TJ = 25°C, IS = 14A, VGS = 0V „
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
––– 150 220 ns TJ = 25°C, IF = 14A
––– 0.8 1.2 µC di/dt = 100A/µs „
ton
Forward Turn-On Time
2
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com


Part Number FS23N15D
Description SMPS MOSFET
Maker International Rectifier
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FS23N15D Datasheet PDF






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