FU9N20D Overview
PD - 93919A SMPS MOSFET Applications High frequency DC-DC converters IRFR9N20D IRFU9N20D HEXFET® Power MOSFET l VDSS 200V RDS(on) max 0.38Ω ID 9.4A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. 1 6/29/00 .DataSheet.in IRFR9N20D/IRFU9N20D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source...
FU9N20D Key Features
- VDSS 200V RDS(on) max 0.38Ω ID 9.4A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
- Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
- Fully Characterized Avalanche Voltage and Current
- D-Pak IRFR9N20D I-Pak IRFU9N20D