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International Rectifier Electronic Components Datasheet

G4BC20UD Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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PD 91449B
IRG4BC20UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
C
VCES = 600V
www.DataSheet4U.com kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
G
VCE(on) typ. = 1.85V
Generation 3
• IGBT co-packaged with HEXFREDultrafast,
ultra-soft-recovery anti-parallel diodes for use in
E
n-channel
@VGE = 15V, IC = 6.5A
bridge configurations
• Industry standard TO-220AB package
Benefits
• Generation -4 IGBTs offer highest efficiencies
available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
TO-220AB
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
13
6.5
52
52
7.0
52
± 20
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
------
Typ.
------
------
0.50
-----
2 (0.07)
Max.
2.1
3.5
------
80
------
Units
°C/W
g (oz)
www.irf.com
1
3/21/2000


International Rectifier Electronic Components Datasheet

G4BC20UD Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

IRG4BC20UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
www.DataSheet4U.com
V(BR)CES Collector-to-Emitter Breakdown VoltageS 600
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ----
VCE(on)
Collector-to-Emitter Saturation Voltage ----
----
----
VGE(th)
Gate Threshold Voltage
3.0
VGE(th)/TJ Temperature Coeff. of Threshold Voltage ----
gfe Forward Transconductance T
1.4
ICES
Zero Gate Voltage Collector Current
----
----
VFM Diode Forward Voltage Drop
----
----
IGES Gate-to-Emitter Leakage Current ----
---- ---- V
0.69 ---- V/°C
1.85 2.1
2.27 ---- V
1.87 ----
---- 6.0
-11 ---- mV/°C
4.3 ---- S
---- 250 µA
---- 1700
1.4 1.7 V
1.3 1.6
---- ±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 6.5A
VGE = 15V
IC = 13A
See Fig. 2, 5
IC = 6.5A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 6.5A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 8.0A
See Fig. 13
IC = 8.0A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
---- 27 41
---- 4.5 6.8
---- 10 16
---- 39 ----
---- 15 ----
---- 93 140
---- 110 170
---- 0.16 ----
---- 0.13 ----
---- 0.29 0.3
---- 38 ----
---- 17 ----
---- 100 ----
---- 220 ----
---- 0.49 ----
---- 7.5 ----
---- 530 ----
---- 39 ----
---- 7.4 ----
---- 37 55
---- 55 90
---- 3.5 5.0
---- 4.5 8.0
---- 65 138
---- 124 360
---- 240 ----
---- 210 ----
IC = 6.5A
nC VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
ns IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50
Energy losses include "tail" and
diode reverse recovery.
mJ See Fig. 9, 10, 11, 18
ns
mJ
nH
pF
ns
A
nC
A/µs
TJ = 150°C, See Fig. 9, 10, 11, 18
IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
TJ = 25°C See Fig.
TJ = 125°C 14
IF = 8.0A
TJ = 25°C See Fig.
TJ = 125°C 15
TJ = 25°C See Fig.
VR = 200V
TJ = 125°C
16 di/dt 200A/µs
TJ = 25°C See Fig.
TJ = 125°C 17
2 www.irf.com


Part Number G4BC20UD
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
PDF Download

G4BC20UD Datasheet PDF






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