G4PC30F
G4PC30F is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
Features
..
Fast Speed IGBT
- Fast: Optimized for medium operating frequencies ( 1-5 k Hz in hard switching, >20 k Hz in resonant mode).
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
- Industry standard TO-247AC package
VCES = 600V
VCE(on) typ. = 1.59V
@VGE = 15V, IC = 17A n-channel
Benefits
- Generation 4 IGBT's offer highest efficiency available
- IGBT's optimized for specified application conditions
- Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
600 31 17 120 120 ± 20 10 100 42 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbf- in (1.1N- m)
Units
V m J W
°C
Thermal Resistance
Parameter
RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
Typ.
- -
- 0.24
- -
- 6 (0.21)
Max.
- -
- 40
- -
- Units
°C/W g...
