Datasheet Summary
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PD- 91621B
IRG4PH40UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
- UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode
- New IGBT design provides tighter parameter distribution and higher efficiency than previous generations
- IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
- Industry standard TO-247AC package
UltraFast CoPack IGBT
VCES = 1200V
VCE(on) typ. = 2.43V
@VGE = 15V, IC = 21A n-ch an nel
Benefits
- Higher switching frequency capability than petitive IGBTs
- Highest efficiency available
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