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International Rectifier Electronic Components Datasheet

G4PH40UD Datasheet

IRG4PH40UD

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PD- 91621B
IRG4PH40UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
• New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
G
E
n-channel
VCES = 1200V
VCE(on) typ. = 2.43V
@VGE = 15V, IC = 21A
bridge configurations
• Industry standard TO-247AC package
Benefits
• Higher switching frequency capability than
competitive IGBTs
• Highest efficiency available
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
TO-247AC
Max.
1200
41
21
82
82
8.0
130
± 20
160
65
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbfin (1.1Nm)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.77
1.7
–––
40
–––
Units
°C/W
g (oz)
1
7/7/2000


International Rectifier Electronic Components Datasheet

G4PH40UD Datasheet

IRG4PH40UD

No Preview Available !

www.DataSheet4U.com
IRG4PH40UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
VFM
IGES
Collector-to-Emitter Breakdown VoltageS
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance T
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
1200
3.0
16
0.43
2.43
2.97
2.47
-11
24
2.6
2.4
V
V/°C
3.1
V
6.0
mV/°C
S
250 µA
5000
3.3 V
3.1
±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 21A
VGE = 15V
IC = 41A
See Fig. 2, 5
IC = 21A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 21A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 8.0A
See Fig. 13
IC = 8.0A, TJ = 125°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
86 130
IC = 21A
13 20 nC VCC = 400V
See Fig. 8
29 44
46
VGE = 15V
TJ = 25°C
35 ns IC = 21A, VCC = 800V
97 150
VGE = 15V, RG = 10
240 360
Energy losses include "tail" and
1.80
diode reverse recovery.
1.93 mJ See Fig. 9, 10, 18
3.73 4.6
42
32
240
510
TJ = 150°C, See Fig. 11, 18
ns IC = 21A, VCC = 800V
VGE = 15V, RG = 10
Energy losses include "tail" and
7.04 mJ diode reverse recovery.
13 nH Measured 5mm from package
1800
120
VGE = 0V
pF VCC = 30V
See Fig. 7
18
ƒ = 1.0MHz
63 95 ns TJ = 25°C See Fig.
106 160
4.5 8.0
TJ = 125°C 14
A TJ = 25°C See Fig.
IF = 8.0A
6.2 11
TJ = 125°C 15
VR = 200V
140 380 nC TJ = 25°C See Fig.
335 880
TJ = 125°C
16 di/dt = 200A/µs
133 A/µs TJ = 25°C See Fig.
85
TJ = 125°C 17
2 www.irf.com


Part Number G4PH40UD
Description IRG4PH40UD
Maker International Rectifier
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G4PH40UD Datasheet PDF






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