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G7PH42U-EP International Rectifier IRG7PH42U-EP

Description INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square RBSOA • 100% of the parts tested for ILM • Positive VCE (ON) temperature co-efficient • Tight parameter distribution • Lead -Free Benefits • High efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to ...
Features
• Low VCE (ON) trench IGBT technology
• Low switching losses
• Maximum junction temperature 175 °C
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) temperature co-efficient
• Tight parameter distribution
• Lead -Free Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies ...

Datasheet PDF File G7PH42U-EP Datasheet - 394.98KB

G7PH42U-EP  






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