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International Rectifier Electronic Components Datasheet

G7PH42U-EP Datasheet

IRG7PH42U-EP

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INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (ON) trench IGBT technology
• Low switching losses
• Maximum junction temperature 175 °C
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) temperature co-efficient
• Tight parameter distribution
• Lead -Free
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
Applications
• U.P.S
• Welding
• Solar inverter
• Induction heating
C
G
E
n-channel
PD - 96233A
IRG7PH42UPbF
IRG7PH42U-EP
VCES = 1200V
IC = 60A, TC = 100°C
TJ(max) =175°C
VCE(on) typ. = 1.7V
CC
GC E
TO-247AC
IRG7PH42UPbF
GC E
TO-247AD
IRG7PH42U-EP
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
ICM
ILM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Continuous Collector Current (Silicon Limited)
Nominal Current
Pulse Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
RθCS
RθJA
Parameter
fThermal Resistance Junction-to-Case-(each IGBT) TO-247AC
fThermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
Max.
1200
90g
60
30
90
120
±30
385
192
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.39
–––
–––
Units
V
A
V
W
°C
Units
°C/W
www.irf.com
02/18/10


International Rectifier Electronic Components Datasheet

G7PH42U-EP Datasheet

IRG7PH42U-EP

No Preview Available !

IRG7PH42UPbF/IRG7PH42U-EP
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
Min.
1200
Typ.
1.2
1.7
2.1
2.2
Max. Units Conditions
e— V VGE = 0V, IC = 100µA
e— V/°C VGE = 0V, IC = 1mA (25°C-150°C)
d2.0 IC = 30A, VGE = 15V, TJ = 25°C
d— V IC = 30A, VGE = 15V, TJ = 150°C
d— IC = 30A, VGE = 15V, TJ = 175°C
VGE(th)
Gate Threshold Voltage
3.0 — 6.0 V VCE = VGE, IC = 1mA
VGE(th)/TJ Threshold Voltage temp. coefficient
— -16 — mV/°C VCE = VGE, IC = 1mA (25°C - 175°C)
gfe Forward Transconductance
— 32 — S VCE = 50V, IC = 30A, PW = 80µs
ICES
Collector-to-Emitter Leakage Current
1
700
150
µA
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 175°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg Total Gate Charge (turn-on)
Min. Typ. Max. Units
— 157 236
dIC = 30A
Conditions
Qge Gate-to-Emitter Charge (turn-on)
— 21 32 nC VGE = 15V
Qgc Gate-to-Collector Charge (turn-on)
Eon Turn-On Switching Loss
— 69 104
— 2105 2374
VCC = 600V
dIC = 30A, VCC = 600V, VGE = 15V
Eoff Turn-Off Switching Loss
— 1182 1424 µJ RG = 10, L = 200µH,TJ = 25°C
Etotal
Total Switching Loss
— 3287 3798
Energy losses include tail & diode reverse recovery
td(on) Turn-On delay time
— 25 34
Diode clamp the same as IRG7PH42UDPbF
tr Rise time
— 32 41 ns
td(off)
Turn-Off delay time
— 229 271
tf Fall time
Eon Turn-On Switching Loss
— 63 86
— 3186 —
ÃdIC = 30A, VCC = 600V, VGE=15V
Eoff Turn-Off Switching Loss
— 2153 —
µJ RG=10, L=200µH, TJ = 175°C
Etotal
Total Switching Loss
— 5339 —
Energy losses include tail & diode reverse recovery
td(on) Turn-On delay time
— 20 —
Diode clamp the same as IRG7PH42UDPbF
tr Rise time
— 31 — ns
td(off)
Turn-Off delay time
— 310 —
tf Fall time
— 162 —
Cies Input Capacitance
— 3338 —
pF VGE = 0V
Coes Output Capacitance
— 124 —
VCC = 30V
Cres Reverse Transfer Capacitance
— 75 —
f = 1.0Mhz
IC = 120A
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 960V, Vp =1200V
Rg = 10, VGE = +20V to 0V, TJ =175°C
Notes:
 VCC = 80% (VCES), VGE = 20V, L = 22µH, RG = 10
‚ Pulse width 400µs; duty cycle 2%.
ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
„ Rθ is measured at TJ of approximately 90°C.
… Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 78A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
2 www.irf.com


Part Number G7PH42U-EP
Description IRG7PH42U-EP
Maker International Rectifier
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