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International Rectifier Electronic Components Datasheet

GA100TS60SQ Datasheet

HALF-BRIDGE IGBT INT-A-PAK Standard Speed IGBT

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Bulletin I27119 rev. B 06/02
"HALF-BRIDGE" IGBT INT-A-PAK
Features
Generation 4 Standard Speed IGBT
Technology
• QuietIR Antiparallel diodes with Fast
Soft recovery
• Very Low Conduction Losses
• Industry Standard Package
• Aluminum Nitride DBC
• UL approved (file E78996)
GA100TS60SQ
Standard Speed IGBT
VCES = 600V
IC = 220A DC
VCE(on) typ. = 1.39V
@ IC = 200A TJ = 25°C
Benefits
Optimized for high current inverter
stages (AC TIG welding machines)
• Direct mounting to heatsink
• Hard switching operation frequency
up to 1 KHz
• Very low junction-to-case thermal
resistance
• Low EMI
INT-A-PAK
Absolute Maximum Ratings
Parameters
VCES
IC
ICM
ILM
VGE
VISOL
PD
Collector-to-Emitter Voltage
Continuos Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 130°C
Peak Switching Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation
@ TC = 25°C
@ TC = 100°C
www.irf.com
Max
600
220
100
440
440
± 20
2500
780
312
Units
V
A
V
W
1


International Rectifier Electronic Components Datasheet

GA100TS60SQ Datasheet

HALF-BRIDGE IGBT INT-A-PAK Standard Speed IGBT

No Preview Available !

GA100TS60SQ
Bulletin I27119 rev. B 06/02
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
VBRCES Collector-to-Emitter Breakdown Voltage 600
V VGE = 0V, IC = 1mA
VCE(on) Collector-to-Emitter Voltage
1.11 1.21
VGE = 15V, IC = 100A
1.39
IC = 200A
1.08 1.17
VGE = 15V, IC = 100A, TJ = 125°C
VGE(th) Gate Threshold Voltage
3 6 IC = 0.25mA
ICES
Collector-to-Emiter Leakage
1 mA VGE = 0V, VCE = 600V
Current
10 VGE = 0V, VCE = 600V, TJ = 125°C
VFM Diode Forward Voltage drop
1.21 1.28 V IC = 100A, VGE = 0V
1.16 1.24
IC = 100A, VGE = 0V, TJ = 125°C
IGES
Gate-to-Emitter Leakage Current
± 250 nA VGE = ± 20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Qg
Qge
Qgc
tr
tf
Eon
Eoff
Ets
Eon
Eoff
Ets
Cies
Coes
Cres
trr
Irr
Qrr
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Rise Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Current
Diode Recovery Charge
640
108
230
0.45
1.0
4
23
27
6
35
41
16250
1040
190
440
15
3400
700
120
300
6
29
35
12
40
52
480
18
4000
nC IC = 100A
VCC = 400V
VGE = 15V
µs IC = 100A, VCC = 480V, VGE = 15V
Rg = 15
mJ
mJ IC = 100A, VCC = 480V, VGE = 15V
Rg = 15, TJ = 125°C
pF VGE = 0V
VCC = 30V
f = 1.0 MHz
ns IF = 50A, dIF/dt = 50A/µs
A VRR = 200V
nC TJ = 125°C
Thermal- Mechanical Specifications
Parameters
Min Typ Max
TJ
TSTG
Operating Junction Temperature Range
Storage Temperature Range
- 40
- 40
150
125
RthJC
Junction-to-Case per Switch
0.16
Per Diode
0.48
RthCS
Case-to-Sink
Per Module
0.1
T Mounting torque Case to heatsink
4
Case to terminal 1, 2, 3
3
Weight
185
2
Units
°C
°C/ W
Nm
g
www.irf.com


Part Number GA100TS60SQ
Description HALF-BRIDGE IGBT INT-A-PAK Standard Speed IGBT
Maker International Rectifier
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GA100TS60SQ Datasheet PDF






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