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International Rectifier Electronic Components Datasheet

GA150TD120U Datasheet

HALF-BRIDGE IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT

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PRELIMINARY
"HALF-BRIDGE" IGBT DOUBLE INT-A-PAK
Features
• Generation 4 IGBT technology
• Standard: Optimized for minimum saturation
voltage and operating frequencies up to 10kHz
• Very low conduction and switching losses
• HEXFREDantiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL approved
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
PD - 5.067A
GA150TD120U
Ultra-FastTM Speed IGBT
VCES = 1200V
VCE(on) typ. = 2.4V
@VGE = 15V, IC = 150A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
ICM
ILM
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 85°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current
Peak Switching Current‚
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
1200
150
300
300
300
±20
2500
780
406
-40 to +150
-40 to +125
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
RθJC
RθJC
RθCS
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Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3ƒ
Weight of Module
Typ.
0.1
400
Max.
0.16
0.20
4.0
3.0
Units
°C/W
N. m
g
1
3/20/98


International Rectifier Electronic Components Datasheet

GA150TD120U Datasheet

HALF-BRIDGE IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT

No Preview Available !

GA150TD120U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 —
VCE(on)
Collector-to-Emitter Voltage
— 2.4
— 2.2
VGE(th)
Gate Threshold Voltage
3.0
VGE(th)/TJ Temperature Coeff. of Threshold Voltage —
gfe Forward Transconductance „
-11
201
ICES
Collector-to-Emitter Leaking Current
——
——
VFM
Diode Forward Voltage - Maximum
— 2.7
— 2.6
IGES
Gate-to-Emitter Leakage Current
——
— VGE = 0V, IC = 1mA
2.9 VGE = 15V, IC = 150A
— V VGE = 15V, IC = 150A, TJ = 125°C
6.0 IC = 1.75 mA
— mV/°C VCE = VGE, IC = 1.75mA
— S VCE = 25V, IC = 150A
2 mA VGE = 0V, VCE = 1200V
20 VGE = 0V, VCE = 1200V, TJ = 125°C
3.5 V IF = 150A, VGE = 0V
— IF = 150A, VGE = 0V, TJ = 125°C
500 nA VGE = ±20V
Dynamic Characteristics - TJ = 125°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
— 1139 1709
VCC = 400V, VGE = 15V
— 192 288 nC IC = 171A
— 377 566
— 414 —
TJ = 25°C
RG1 = 15, RG2 = 0
— 208 — ns IC = 150A
— 552 —
— 342 —
VCC = 720V
VGE = ±15V
— 29 — mJ See Fig.17 through Fig.21
— 32 —
— 61 90
— 25630 —
VGE = 0V
— 1139 — pF VCC = 30V
— 221 —
ƒ = 1 MHz
— 186 —
— 133 —
— 12381 —
— 2524 —
ns
A
nC
A/µs
IC = 150A
RG1= 15
RG2 = 0
VCC = 720V
di/dt=1260A/µs
Details of note  through „ are on the last page
2 www.irf.com


Part Number GA150TD120U
Description HALF-BRIDGE IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT
Maker International Rectifier
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GA150TD120U Datasheet PDF






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