GA200HS60S Datasheet | International Rectifier

Features - Generation 4 IGBT Technology - Standard speed: optimized for hard switching operating frequencies up to 1000 Hz - Very Low Conduction Losses - Industry standard package Standard Speed IGBT VCES = 600V VCE(on) typ. = 1.19V @ VGE = 15V, IC = 200A TJ = 25°C Benefits - Increased operating efficiency - Direct mounting to heatsink - Performance optimized as output inverter stage for TIG welding machines INT-A-PAK Absolute Maximum Ratings Parameters VCES IC ICM ILM VGE VISOL PD Collector-to-Emitter Voltage Continuos Collector Current Pulsed Collector Current Peak Switching Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation @ TC = 25°C @ TC = 85°C @ TC = 25°C @ TC = 110°C Max 600 470 200 800 800 ± 20 2500 830 430 Units .irf. Datasheet pdf - http://..net/ .Data Sheet.co.kr Bulletin I27121 rev. B 07/02 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters VCES V CE(on) V GE(th) I CES I GES Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Gate Threshold Voltage Collector-to-Emiter Leakage Current Gate-to-Emitter Leakage Current Min Typ Max Units Test Conditions 600 1.19 1.17 3 1.25 6 1 10 ± 250 m A n A V V GE = 0V, I C = 1m A V GE = 15V, I C = 200A V GE = 15V, I C = 200A, T J = 125°C I C = 0.5m A V GE = 0V, V CE = 600V V GE = 0V, V CE = 600V, T J = 125°C V GE = ± 20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Qg Qge Qgc Eon Eoff Ets Eon Eoff Ets Cies Coes Cres Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Min Typ Max Units Test Conditions n C IC = 200A VCC = 400V VGE = 15V IC = 200A, VCC = 480V, VGE = 15V Rg = 10Ω free-wheeling DIODE: 30ETH06 IC = 200A, VCC = 480V, VGE = 15V Rg =...