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International Rectifier Electronic Components Datasheet

GA200HS60S Datasheet

Standard Speed IGBT

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"HALF-BRIDGE" IGBT INT-A-PAK
Features
• Generation 4 IGBT Technology
• Standard speed: optimized for hard switching
operating frequencies up to 1000 Hz
• Very Low Conduction Losses
• Industry standard package
Bulletin I27121 rev. B 07/02
GA200HS60S
Standard Speed IGBT
VCES = 600V
VCE(on) typ. = 1.19V @
VGE = 15V, IC = 200A
TJ = 25°C
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized as output inverter stage
for TIG welding machines
INT-A-PAK
Absolute Maximum Ratings
Parameters
VCES
IC
ICM
ILM
VGE
VISOL
PD
Collector-to-Emitter Voltage
Continuos Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 110°C
Peak Switching Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation
@ TC = 25°C
@ TC = 85°C
Max
600
470
200
800
800
± 20
2500
830
430
www.irf.com
Units
V
A
V
W
1
Datasheet pdf - http://www.DataSheet4U.net/


International Rectifier Electronic Components Datasheet

GA200HS60S Datasheet

Standard Speed IGBT

No Preview Available !

www.DataSheet.co.kr
GA200HS60S
Bulletin I27121 rev. B 07/02
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
VCES
Collector-to-Emitter Breakdown Voltage 600
V VGE = 0V, IC = 1mA
VCE(on) Collector-to-Emitter Voltage
1.19 1.25
VGE = 15V, IC = 200A
1.17 -
VGE = 15V, IC = 200A, TJ = 125°C
VGE(th) Gate Threshold Voltage
3 6 IC = 0.5mA
ICES
Collector-to-Emiter Leakage
1 mA VGE = 0V, VCE = 600V
Current
10 VGE = 0V, VCE = 600V, TJ = 125°C
IGES
Gate-to-Emitter Leakage Current
± 250 nA VGE = ± 20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Qg
Qge
Qgc
Eon
Eoff
Ets
Eon
Eoff
Ets
Cies
Coes
Cres
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1600 1700 nC IC = 200A
260 340
VCC = 400V
580 670
VGE = 15V
27 mJ IC = 200A, VCC = 480V, VGE = 15V
47 Rg = 10
74 free-wheeling DIODE: 30ETH06
29
77
106
32500
2080
380
31
90
121
mJ IC = 200A, VCC = 480V, VGE = 15V
Rg = 10
free-wheeling DIODE: 30ETH06, TJ = 125°C
pF VGE = 0V
VCC = 30V
f = 1.0 MHz
Thermal- Mechanical Specifications
Parameters
Min Typ Max
TJ
TSTG
RthJC
Operating Junction Temperature Range
Storage Temperature Range
Junction-to-Case
- 40
- 40
150
125
0.15
RthCS
Case-to-Sink
0.1
T Mounting torque Case to heatsink
4
Case to terminal 1, 2, 3
3
Weight
185
Units
°C
°C/ W
Nm
g
2 www.irf.com
Datasheet pdf - http://www.DataSheet4U.net/


Part Number GA200HS60S
Description Standard Speed IGBT
Maker International Rectifier
PDF Download

GA200HS60S Datasheet PDF






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