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GA200HS60S
Bulletin I27121 rev. B 07/02
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
VCES
Collector-to-Emitter Breakdown Voltage 600
V VGE = 0V, IC = 1mA
VCE(on) Collector-to-Emitter Voltage
1.19 1.25
VGE = 15V, IC = 200A
1.17 -
VGE = 15V, IC = 200A, TJ = 125°C
VGE(th) Gate Threshold Voltage
3 6 IC = 0.5mA
ICES
Collector-to-Emiter Leakage
1 mA VGE = 0V, VCE = 600V
Current
10 VGE = 0V, VCE = 600V, TJ = 125°C
IGES
Gate-to-Emitter Leakage Current
± 250 nA VGE = ± 20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Qg
Qge
Qgc
Eon
Eoff
Ets
Eon
Eoff
Ets
Cies
Coes
Cres
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1600 1700 nC IC = 200A
260 340
VCC = 400V
580 670
VGE = 15V
27 mJ IC = 200A, VCC = 480V, VGE = 15V
47 Rg = 10Ω
74 free-wheeling DIODE: 30ETH06
29
77
106
32500
2080
380
31
90
121
mJ IC = 200A, VCC = 480V, VGE = 15V
Rg = 10Ω
free-wheeling DIODE: 30ETH06, TJ = 125°C
pF VGE = 0V
VCC = 30V
f = 1.0 MHz
Thermal- Mechanical Specifications
Parameters
Min Typ Max
TJ
TSTG
RthJC
Operating Junction Temperature Range
Storage Temperature Range
Junction-to-Case
- 40
- 40
150
125
0.15
RthCS
Case-to-Sink
0.1
T Mounting torque Case to heatsink
4
Case to terminal 1, 2, 3
3
Weight
185
Units
°C
°C/ W
Nm
g
2 www.irf.com
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