GA200NS61U
Features
- Generation 4 IGBT technology
- Ultra Fast: Optimized for high operating frequencies 8-40 k Hz in hard switching, >200 k Hz in resonant mode
- Very low conduction and switching losses
- HEXFRED™ antiparallel diodes with ultra- soft recovery
- Industry standard package
- UL approved
High Side Switch Chopper Module Ultra-Fast TM Speed IGBT
VCES = 600V VCE(on) typ. = 1.8V
5 1 2
@VGE = 15V, IC = 200A
Benefits
- Increased operating efficiency
- Direct mounting to heatsink
- Performance optimized for power conversion: UPS, SMPS, Welding
- Lower EMI, requires less snubbing
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C ICM ILM IFM VGE VISOL PD @ TC = 25°C PD @ TC = 85°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current Peak Switching Current Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction...
