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International Rectifier Electronic Components Datasheet

GA200NS61U Datasheet

Ultra-Fast Speed IGBT

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IGBT INT-A-PAK
Features
Generation 4 IGBT technology
UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
Very low conduction and switching losses
HEXFREDantiparallel diodes with ultra- soft
recovery
Industry standard package
UL approved
Benefits
Increased operating efficiency
Direct mounting to heatsink
Performance optimized for power conversion: UPS,
SMPS, Welding
Lower EMI, requires less snubbing
PD -94347
GA200NS61U
High Side Switch Chopper Module
Ultra-FastTM Speed IGBT
3
VCES = 600V
4
5
VCE(on) typ. = 1.8V
1 @VGE = 15V, IC = 200A
2
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
ICM
ILM
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 85°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current
Peak Switching Current‚
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
600
200
400
400
400
±20
2500
625
325
-40 to +150
-40 to +125
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
RθJC
RθJC
RθCS
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3ƒ
Weight of Module
www.irf.com
Typ.
0.1
200
Max.
0.20
0.35
4.0
3.0
Units
°C/W
N.m
g
1
11/06/01
Datasheet pdf - http://www.DataSheet4U.net/


International Rectifier Electronic Components Datasheet

GA200NS61U Datasheet

Ultra-Fast Speed IGBT

No Preview Available !

www.DataSheet.co.kr
GA200NS61U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — —
VGE = 0V, IC = 1mA
VCE(on)
Collector-to-Emitter Voltage
1.8 2.2
VGE = 15V, IC = 200A
1.9 V VGE = 15V, IC = 200A, TJ = 125°C
VGE(th)
Gate Threshold Voltage
3.0 6.0
IC = 1.25mA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage -11 mV/°C VCE = VGE, IC = 1.25mA
gfe Forward Transconductance „
175 S VCE = 25V, IC = 200A
ICES
Collector-to-Emitter Leaking Current
— — 1.0 mA VGE = 0V, VCE = 600V
— — 10
VGE = 0V, VCE = 600V, TJ = 125°C
VFM
Diode Forward Voltage - Maximum
1.6 2.2 V IF = 200A, VGE = 0V
1.7
IF = 200A, VGE = 0V, TJ = 125°C
IGES Gate-to-Emitter Leakage Current — — 250 nA VGE = ±20V
Dynamic Characteristics - TJ = 125°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff (1)
Ets (1)
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
903 1355
VCC = 400V, VGE = 15V
125 188
306 459
342
194
nC IC = 135A
TJ = 25°C
RG1 = 27, RG2 = 0Ω,
ns IC = 200A
366
213
VCC = 360V
VGE = ±15V
12 mJ Inductive load
16
28 39
20068
VGE = 0V
1254
261
pF VCC = 30V
ƒ = 1 MHz
137
96
6731
5705
ns
A
µC
A/µs
IC = 200A
RG1 = 27
RG2 = 0
VCC = 360V
di/dt=1227A/µs
2 www.irf.com
Datasheet pdf - http://www.DataSheet4U.net/


Part Number GA200NS61U
Description Ultra-Fast Speed IGBT
Maker International Rectifier
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GA200NS61U Datasheet PDF






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