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International Rectifier Electronic Components Datasheet

GA200TD120U Datasheet

HALF-BRIDGE IGBT DOUBLE INT-A-PAK

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PRELIMINARY
"HALF-BRIDGE" IGBT DOUBLE INT-A-PAK
Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Very low conduction and switching losses
• HEXFREDantiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL approved
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
PD - 5.061B
GA200TD120U
Ultra-FastTM Speed IGBT
VCES = 1200V
VCE(on) typ. = 2.3V
@VGE = 15V, IC = 200A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
ICM
ILM
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 85°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current
Peak Switching Current‚
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
1200
200
400
400
400
±20
2500
1040
540
-40 to +150
-40 to +125
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
RθJC
RθJC
RθCS
www.irf.com
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3ƒ
Weight of Module
Typ.
0.1
400
Max.
0.12
0.20
4.0
3.0
Units
°C/W
N.m
g
1
3/20/98


International Rectifier Electronic Components Datasheet

GA200TD120U Datasheet

HALF-BRIDGE IGBT DOUBLE INT-A-PAK

No Preview Available !

GA200TD120U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200
VCE(on)
Collector-to-Emitter Voltage
VGE(th)
Gate Threshold Voltage
3.0
DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage —
gfe Forward Transconductance „
ICES
Collector-to-Emitter Leaking Current
VFM
Diode Forward Voltage - Maximum
IGES Gate-to-Emitter Leakage Current
2.3
2.1
-11
261
3.2
3.1
— VGE = 0V, IC = 1mA
2.8 VGE = 15V, IC = 200A
— V VGE = 15V, IC = 200A, TJ = 125°C
6.0 IC = 2.5mA
— mV/°C VCE = VGE, IC = 2.5mA
— S VCE = 25V, IC = 200A
2.0 mA VGE = 0V, VCE = 1200V
20 VGE = 0V, VCE = 1200V, TJ = 125°C
4.1 V IF = 200A, VGE = 0V
— IF = 200A, VGE = 0V, TJ = 125°C
500 nA VGE = ±20V
Dynamic Characteristics - TJ = 125°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff (1)
Ets (1)
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
— 1660 2490
VCC = 400V
VGE = 15V
— 280 420 nC IC = 249A
— 550 825
TJ = 25°C
— 636 —
RG1 = 15, RG2 = 0,
— 201 — ns IC = 200A
— 650 —
VCC = 720V
— 341 —
VGE = ±15V
— 44 — mJ
— 44 —
— 88 130
— 37343 —
VGE = 0V
— 1660 — pF VCC = 30V
— 322 —
ƒ = 1 MHz
— 196 — ns IC = 200A
— 131 — A RG1 = 15
— 12833 — nC RG2 = 0
— 1740 — A/µs VCC = 720V
di/dt»1294A/µs
2 www.irf.com


Part Number GA200TD120U
Description HALF-BRIDGE IGBT DOUBLE INT-A-PAK
Maker International Rectifier
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GA200TD120U Datasheet PDF






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