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International Rectifier Electronic Components Datasheet

GA250TD120U Datasheet

HALF-BRIDGE IGBT DOUBLE INT-A-PAK

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"HALF-BRIDGE" IGBT DOUBLE INT-A-PAK
Features
• Generation 4 IGBT technology
• Standard: Optimized for minimum saturation
www.DataSheet4U.com voltage and operating frequencies up to 10kHz
• Very low conduction and switching losses
• HEXFREDantiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL approved
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
PD - 50054A
GA250TD120U
Ultra-FastTM Speed IGBT
VCES = 1200V
VCE(on) typ. = 2.4V
@VGE = 15V, IC = 250A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
ICM
ILM
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 85°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector CurrentQ
Peak Switching CurrentR
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
1200
250
500
500
500
±20
2500
1250
650
-40 to +150
-40 to +125
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
RθJC
RθJC
RθCS
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Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3S
Weight of Module
Typ.
0.1
400
Max.
0.10
0.20
4.0
3.0
Units
°C/W
N.m
g
1
4/24/2000


International Rectifier Electronic Components Datasheet

GA250TD120U Datasheet

HALF-BRIDGE IGBT DOUBLE INT-A-PAK

No Preview Available !

GA250TD120U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
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V(BR)CES Collector-to-Emitter Breakdown Voltage 1200
VCE(on)
Collector-to-Emitter Voltage
VGE(th)
Gate Threshold Voltage
3.0
VGE(th)/TJ Temperature Coeff. of Threshold Voltage —
gfe Forward Transconductance T
ICES Collector-to-Emitter Leaking Current —
VFM
Diode Forward Voltage - Maximum
IGES
Gate-to-Emitter Leakage Current
2.4
2.1
-11
323
3.0
2.9
— VGE = 0V, IC = 1mA
2.9 VGE = 15V, IC = 250A
— V VGE = 15V, IC = 250A, TJ = 125°C
6.0 VCE = 6V, IC = 3 mA
— mV/°C VCE = 6V, IC = 3mA
— S VCE = 25V, IC = 250A
2.0 mA VGE = 0V, VCE = 1200V
20 VGE = 0V, VCE = 1200V, TJ = 125°C
4.0 V IF = 250A, VGE = 0V
— IF = 250A, VGE = 0V, TJ = 125°C
500 nA VGE = ±20V
Dynamic Characteristics - TJ = 125°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
— 1979 2968
VCC = 400V, VGE = 15V
— 334 501 nC IC = 297A
— 655 983
TJ = 25°C
— 731 —
RG1 = 15, RG2 = 0
— 227 — ns IC = 250A
— 653 —
VCC = 720V
— 343 —
VGE = ±15V
— 54 — mJ See Fig.17 through Fig.21
— 54 —
— 108 162
— 44517 —
— 1979 —
— 383 —
VGE = 0V
pF VCC = 30V
ƒ = 1 MHz
— 214 —
— 155 —
— 16540 —
— 1970 —
ns
A
nC
A/µs
IC = 250A
RG1= 15
RG2 = 0
VCC = 720V
di/dt=1368A/µs
Details of note Q through T are on the last page
2 www.irf.com


Part Number GA250TD120U
Description HALF-BRIDGE IGBT DOUBLE INT-A-PAK
Maker International Rectifier
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GA250TD120U Datasheet PDF






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