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International Rectifier Electronic Components Datasheet

GA250TS60U Datasheet

HALF-BRIDGE IGBT INT-A-PAK

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"HALF-BRIDGE" IGBT INT-A-PAK
Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Very low conduction and switching losses
• HEXFREDantiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL approved
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
PD - 50047D
GA250TS60U
Ultra-FastTM Speed IGBT
VCES = 600V
VCE(on) typ. = 1.9V
@VGE = 15V, IC = 250A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
ICM
ILM
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 85°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector CurrentQ
Peak Switching CurrentR
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
600
250
500
500
500
±20
2500
780
400
-40 to +150
-40 to +125
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
RθJC
RθJC
RθCS
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink S
Mounting Torque, Case-to-Terminal 1, 2 & 3 T
Weight of Module
www.irf.com
Typ.
0.1
200
Max.
0.16
0.35
6.0
5.0
Units
°C/W
N.m
g
1
05/14/02


International Rectifier Electronic Components Datasheet

GA250TS60U Datasheet

HALF-BRIDGE IGBT INT-A-PAK

No Preview Available !

GA250TS60U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — —
VGE = 0V, IC = 1mA
VCE(on)
Collector-to-Emitter Voltage
— 1.9 2.3
VGE = 15V, IC = 250A
— 2.0 — V VGE = 15V, IC = 250A, TJ = 125°C
VGE(th)
Gate Threshold Voltage
3.0 — 6.0
IC = 1.5mA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 1.5mA
gfe Forward Transconductance T — 204 — S VCE = 25V, IC = 250A
ICES
Collector-to-Emitter Leaking Current
— — 1.0 mA VGE = 0V, VCE = 600V
— — 10
VGE = 0V, VCE = 600V, TJ = 125°C
VFM
Diode Forward Voltage - Maximum
— 4.0 — V IF = 250A, VGE = 0V
— 4.1 —
IF = 250A, VGE = 0V, TJ = 125°C
IGES
Gate-to-Emitter Leakage Current
— — 250 nA VGE = ±20V
Dynamic Characteristics - TJ = 125°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff (1)
Ets (1)
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
— 1050 1600
VCC = 400V
— 146 220 nC IC = 250A
— 525 790
TJ = 25°C
— 173 —
RG1 = 15, RG2 = 0,
— 242 — ns IC = 250A
— 1020 —
— 190 —
VCC = 360V
VGE = ±15V
— 10.5 — mJ
— 20.0 —
— 30.5 45
— 23400 —
VGE = 0V
— 1460 —
— 300 —
pF VCC = 30V
ƒ = 1 MHz
— 183 —
— 124 —
— 11275 —
— 1700 —
ns
A
µC
A/µs
IC = 250A
RG1 = 15
RG2 = 0
VCC = 360V
di/dt=1300A/µs
2 www.irf.com


Part Number GA250TS60U
Description HALF-BRIDGE IGBT INT-A-PAK
Maker International Rectifier
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GA250TS60U Datasheet PDF






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