GA500TD60U - HALF-BRIDGE IGBT DUAL INT-A-PAK

Features

Generation 4 IGBT technology.
UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.
Very low conduction and switching losses.

International Rectifier

Datasheet Details

Part number	GA500TD60U
Manufacturer	International Rectifier
File Size	266.42 KB
Description	HALF-BRIDGE IGBT DUAL INT-A-PAK
Datasheet	GA500TD60U Datasheet
Additional preview pages of the GA500TD60U datasheet.

📁 Similar Datasheet

GA50JT06-258 - Junction Transistor (GeneSiC)
GA50JT06-CAL - OFF Silicon Carbide Junction Transistor (GeneSiC)
GA50JT12-247 - Normally - OFF Silicon Carbide Junction Transistor (GeneSiC)
GA50JT12-CAL - Junction Transistor (GeneSiC)
GA50JT17-247 - Junction Transistor (GeneSiC)
GA50JT17-CAL - Junction Transistor (GeneSiC)
GA50K6A1A - THERMISTORS (TE)
GA50K6A1B - THERMISTORS (TE)
GA50K6A1C - THERMISTORS (TE)
GA50K6A1D - THERMISTORS (TE)

Other Datasheets by International Rectifier

GA50TS120U - HALF-BRIDGE IGBT INT-A-PAK

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com PD - 50048D GA500TD60U "HALF-BRIDGE" IGBT DUAL INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved Ultra-FastTM Speed IGBT VCES = 600V VCE(on) typ. = 1.

Published: Jul 16, 2010 |