GA50TS120U Datasheet | International Rectifier

Features - Generation 4 IGBT technology - Ultra Fast: Optimized for high operating frequencies 8-40 k Hz in hard switching, >200 k Hz in resonant mode - Very low conduction and switching losses - HEXFRED™ antiparallel diodes with ultra- soft recovery - Industry standard package - UL approved Ultra-Fast TM Speed IGBT VCES = 1200V VCE(on) typ. = 2.4V @VGE = 15V, IC = 50A Benefits - Increased operating efficiency - Direct mounting to heatsink - Performance optimized for power conversion: UPS, SMPS, Welding - Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C ICM ILM IFM VGE VISOL PD @ TC = 25°C PD @ TC = 85°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current ➀ Peak Switching Current ➁ Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 1200 50 100 100 100 ±20 2500 280 145 -40 to +150 -40 to +125 Units V W °C Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 ➂ Weight of Module Typ. - - 0.1 - - 200 Max. 0.44 0.70 - 4.0 3.0 - Units °C/W N. m g .irf. 4/24/2000...