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International Rectifier Electronic Components Datasheet

GA50TS120U Datasheet

HALF-BRIDGE IGBT INT-A-PAK

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"HALF-BRIDGE" IGBT INT-A-PAK
Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Very low conduction and switching losses
• HEXFREDantiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL approved
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
PD - 50064A
GA50TS120U
Ultra-FastTM Speed IGBT
VCES = 1200V
VCE(on) typ. = 2.4V
@VGE = 15V, IC = 50A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
ICM
ILM
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 85°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current
Peak Switching Current
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
1200
50
100
100
100
±20
2500
280
145
-40 to +150
-40 to +125
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
RθJC
RθJC
RθCS
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3
Weight of Module
www.irf.com
Typ.
0.1
200
Max.
0.44
0.70
4.0
3.0
Units
°C/W
N.m
g
1
4/24/2000


International Rectifier Electronic Components Datasheet

GA50TS120U Datasheet

HALF-BRIDGE IGBT INT-A-PAK

No Preview Available !

www.DataSheet4U.com
GA50TS120U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200
VCE(on)
Collector-to-Emitter Voltage
VGE(th)
VGE(th)/TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Collector-to-Emitter Leaking Current
3.0
VFM
Diode Forward Voltage - Maximum
IGES Gate-to-Emitter Leakage Current
2.4
2.2
-11
72
2.9
2.7
VGE = 0V, IC = 1mA
3.0 VGE = 15V, IC = 50A
V VGE = 15V, IC = 50A, TJ = 125°C
6.0 VCE = 6.0V, IC = 500µA
mV/°C VCE = 6.0V, IC = 500µA
S VCE = 25V, IC = 50A
1.0 mA VGE = 0V, VCE = 1200V
10 VGE = 0V, VCE = 1200V, TJ = 125°C
4.1 V IF = 50A, VGE = 0V
IF = 50A, VGE = 0V, TJ = 125°C
250 nA VGE = ±20V
Dynamic Characteristics - TJ = 125°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff (1)
Ets (1)
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
397 596
VCC = 400V
67 100 nC IC = 60A
132 197
TJ = 25°C
74
RG1 = 15, RG2 = 0,
82 ns IC = 50A
313
VCC = 720V
327
VGE = ±15V
6.0 mJ Inductor load
10
16 24
8933
VGE = 0V
397 pF VCC = 30V
77
ƒ = 1 MHz
141
66
ns IC = 50A
A RG1 = 15
4616 nC RG2 = 0
999 A/µs VCC = 720V
di/dt = 1200A/µs
2 www.irf.com


Part Number GA50TS120U
Description HALF-BRIDGE IGBT INT-A-PAK
Maker International Rectifier
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GA50TS120U Datasheet PDF






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