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International Rectifier Electronic Components Datasheet

GA600GD25S Datasheet

SINGLE SWITCH IGBT DUAL INT-A-PAK

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SINGLE SWITCH IGBT DUAL INT-A-PAK
Features
• Standard speed, optimized for battery powered
application
• Very low conduction losses
• HEXFREDTM antiparallel diodes with ultra-soft
recovery
• Industry standard package
• UL recognition pending
• Internal thermistor
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
PD - 50071C
GA600GD25S
StandardTM Speed IGBT
VCES = 250V
VCE(on) typ. = 1.25V
@VGE = 15V, IC = 600A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
ICM
ILM
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 85°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current
Peak Switching Current‚
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Thermal / Mechanical Characteristics
RθJC
RθJC
RθCS
www.irf.com
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink ƒ
Mounting Torque, Case-to-Terminal 1, 2 ƒ
Mounting Torque, Case-to-Terminal 3,4,5,6
Weight of Module
Max.
250
600
1200
1200
1200
±17
2500
1920
1000
-40 to +150
-40 to +125
Typ.
0.04
365
Units
V
A
V
W
°C
Max.
0.065
0.20
6.0
5.0
1.5
Units
°C/W
N.m
g
1
08/27/02


International Rectifier Electronic Components Datasheet

GA600GD25S Datasheet

SINGLE SWITCH IGBT DUAL INT-A-PAK

No Preview Available !

www.DataSheet4U.com
GA600GD25S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 250
VCE(on)
Collector-to-Emitter Voltage
VGE(th)
Gate Threshold Voltage
3.0
VGE(th)/TJ Temperature Coeff. of Threshold Voltage —
gfe Forward Transconductance ƒ
ICES
Collector-to-Emitter Leaking Current
VFM
Diode Forward Voltage - Maximum
IGES
TDP
Gate-to-Emitter Leakage Current
Pulse Diode Temp Rise
R-T25
Thermistor, Positive Temp Coefficient 738
1.25
1.25
-11
720
1.5
1.5
820
1.4
—V
6.0
— mV/°C
—S
2.0 mA
20
1.8 V
1.0 µA
80 °C
902
VGE = 0V, IC = 1mA
VGE = 15V, IC = 600A
VGE = 15V, IC = 600A, TJ = 125°C
IC = 5.0mA, VCE = 6.0V
VCE = 6.0V, IC = 5.0mA,TC= 25/125°C
VCE = 25V, IC = 600A
VGE = 0V, VCE = 250V
VGE = 0V, VCE = 250V, TJ = 125°C
IF = 300A, VGE = 0V
IF = 300A, VGE = 0V, TJ = 125°C
VGE = ±14V (18V zeners gate-emitter)
IC = 300A, t = 150msec, Tc =70°C
I = 100mA,P = 2.5mW/°C (see note 1)
Dynamic Characteristics - TJ = 125°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff (1)
Ets (1)
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
— 3825 5738
VCC = 200V, VGE = 15V
— 555 832 nC IC = 600A
— 1262 1893
TJ = 25°C
— 1060 —
RG1 = 15, RG2 = 0,
— 950 — ns IC = 600A
— 846 —
— 934 —
VCC = 150V,
VGE = ±15V
Inductor load
— 17 — mJ See Fig. 17, 19
— 105 —
— 122 250
— 86063 —
VGE = 0V
— 9754 —
— 1913 —
pF VCC = 30V
ƒ = 1 MHz
— 314 —
— 80 —
— 12513 —
— 632 —
ns
A
µC
A/µs
IC = 600A
RG1 = 15
RG2 = 0
VCC = 150V
di/dt = 500A/µs
Notes:
1. The thermistor has an average rate of change of 7/°C between 20°C and 125°C.
Consult U.S. Sensor data sheet for P821GS1K for details
2 www.irf.com


Part Number GA600GD25S
Description SINGLE SWITCH IGBT DUAL INT-A-PAK
Maker International Rectifier
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