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International Rectifier Electronic Components Datasheet

GA75TS120U Datasheet

Ultra-FastTM Speed IGBT

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"HALF-BRIDGE" IGBT INT-A-PAK
Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Very low conduction and switching losses
• HEXFREDantiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL approved
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
PD - 50062A
GA75TS120U
Ultra-FastTM Speed IGBT
VCES = 1200V
VCE(on) typ. = 2.1V
@VGE = 15V, IC = 75A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
ICM
ILM
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 85°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current
Peak Switching Current
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
1200
75
150
150
150
±20
2500
390
200
-40 to +150
-40 to +125
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
RθJC
RθJC
RθCS
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3
Weight of Module
www.irf.com
Typ.
0.1
200
Max.
0.32
0.35
4.0
3.0
Units
°C/W
N.m
g
1
4/24/2000


International Rectifier Electronic Components Datasheet

GA75TS120U Datasheet

Ultra-FastTM Speed IGBT

No Preview Available !

GA75TS120U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200
VCE(on)
Collector-to-Emitter Voltage
2.1
1.9
VGE(th)
Gate Threshold Voltage
3.0
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance
ICES
Collector-to-Emitter Leaking Current
-11
107
——
VFM
Diode Forward Voltage - Maximum
2.3
2.1
IGES
Gate-to-Emitter Leakage Current
——
VGE = 0V, IC = 1mA
3.1 VGE = 15V, IC = 75A
V VGE = 15V, IC = 75A, TJ = 125°C
6.0 VCE = 6.0V, IC = 750µA
mV/°C VCE = 6.0V, IC = 750µA
S VCE = 25V, IC = 75A
1.0 mA VGE = 0V, VCE = 1200V
10 VGE = 0V, VCE = 1200V, TJ = 125°C
3.3 V IF = 75A, VGE = 0V
IF = 75A, VGE = 0V, TJ = 125°C
250 nA VGE = ±20V
Dynamic Characteristics - TJ = 125°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff (1)
Ets (1)
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
570 854
96 144
189 283
109
119
392
402
11
20
31 45
12815
570
110
174
107
9367
1491
VCC = 400V
nC IC = 85A
TJ = 25°C
RG1 = 15, RG2 = 0,
ns IC = 75A
VCC = 720V
VGE = ±15V
mJ Inductor load
pF
ns
A
nC
A/µs
VGE = 0V
VCC = 30V
ƒ = 1 MHz
IC = 75A
RG1 = 15
RG2 = 0
VCC = 720V
di/dt = 1300A/µs
2 www.irf.com


Part Number GA75TS120U
Description Ultra-FastTM Speed IGBT
Maker International Rectifier
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GA75TS120U Datasheet PDF






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