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International Rectifier Electronic Components Datasheet

GA75TS60U Datasheet

HALF-BRIDGE IGBT INT-A-PAK

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"HALF-BRIDGE" IGBT INT-A-PAK
Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Very low conduction and switching losses
• HEXFREDantiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL approved
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
PD -50050D
GA75TS60U
Ultra-FastTM Speed IGBT
VCES = 600V
VCE(on) typ. = 1.7V
@VGE = 15V, IC = 75A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
ICM
ILM
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 85°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current•
Peak Switching Current‚
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
600
75
150
150
150
±20
2500
285
150
-40 to +150
-40 to +125
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
RθJC
RθJC
RθCS
www.irf.com
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink S
Mounting Torque, Case-to-Terminal 1, 2 & 3 T
Weight of Module
Typ.
0.1
200
Max.
0.44
0.70
6.0
5.0
Units
°C/W
N.m
g
1
05/20/02


International Rectifier Electronic Components Datasheet

GA75TS60U Datasheet

HALF-BRIDGE IGBT INT-A-PAK

No Preview Available !

GA75TS60U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600
VCE(on)
Collector-to-Emitter Voltage
VGE(th)
Gate Threshold Voltage
3.0
VGE(th)/TJ Temperature Coeff. of Threshold Voltage —
gfe Forward Transconductance „
ICES
Collector-to-Emitter Leaking Current
VFM
Diode Forward Voltage - Maximum
IGES Gate-to-Emitter Leakage Current —
1.7
1.76
-11
83
3.3
3.1
2.2
—V
6.0
— mV/°C
—S
1.0 mA
10
—V
250 nA
VGE = 0V, IC = 1mA
VGE = 15V, IC = 75A
VGE = 15V, IC = 75A, TJ = 125°C
IC = 0.5mA
VCE = VGE, IC = 500µA
VCE = 25V, IC = 75A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 125°C
IF = 75A, VGE = 0V
IF = 75A, VGE = 0V, TJ = 125°C
VGE = ±20V
Dynamic Characteristics - TJ = 125°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff (1)
Ets (1)
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
— 340 510
VCC = 400V, VGE = 15V
— 48 72
— 120 170
— 110 —
— 94 —
nC IC = 75A
TJ = 25°C
RG1 = 27, RG2 = 0,
ns IC = 75A
— 250 —
— 180 —
VCC = 360V
VGE = ±15V
— 1.95 — mJ
— 4.4 —
— 6.35 12.6
— 7880 —
VGE = 0V
— 770 —
— 98 —
pF VCC = 30V
ƒ = 1 MHz
— 133 —
— 94 —
— 6274 —
— 2061 —
ns
A
nC
A/µs
IC = 75A
RG1 = 27
RG2 = 0
VCC = 360V
di/dt =1300A/µs
2 www.irf.com


Part Number GA75TS60U
Description HALF-BRIDGE IGBT INT-A-PAK
Maker International Rectifier
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GA75TS60U Datasheet PDF






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