GB10B60KD
GB10B60KD is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
Features
- Low VCE (on) Non Punch Through IGBT Technology.
- Low Diode VF.
- 10µs Short Circuit Capability.
- Square RBSOA.
- Ultrasoft Diode Reverse Recovery Characteristics.
- Positive VCE (on) Temperature Coefficient.
G E tsc > 10µs, TJ=150°C
Benefits
- Benchmark Efficiency for Motor Control.
- Rugged Transient Performance.
- Low EMI.
- Excellent Current Sharing in Parallel Operation. n-channel
VCE(on) typ. = 1.8V
TO-220AB IRGB10B60KD
D2Pak IRGS10B60KD Max.
600 22 12 44 44 22 10 44 ± 20 156 62 -55 to +150
TO-262 IRGSL10B60KD Units
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current
- Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
°C 300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
RθJC RθJC RθCS RθJA RθJA Wt Junction-to-Case
- IGBT Junction-to-Case
- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Junction-to-Ambient (PCB Mount, steady state) Weight
Min.
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