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International Rectifier Electronic Components Datasheet

GB10B60KD Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
C
G
E
n-channel
PD - 94382D
IRGB10B60KD
IRGS10B60KD
IRGSL10B60KD
VCES = 600V
IC = 12A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current „
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
TO-220AB
D2Pak
TO-262
IRGB10B60KD IRGS10B60KD IRGSL10B60KD
Max.
600
22
12
44
44
22
10
44
± 20
156
62
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
RθJC
RθJC
RθCS
RθJA
RθJA
Wt
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Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)‚
Weight
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
–––
1.44
Max.
0.8
3.4
–––
62
40
–––
Units
°C/W
g
1
8/18/04


International Rectifier Electronic Components Datasheet

GB10B60KD Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

www.DataSheet4U.com
IRG/B/S/SL10B60KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
VFM
IGES
Collector-to-Emitter Breakdown Voltage 600
Temperature Coeff. of Breakdown Voltage –––
Collector-to-Emitter Saturation Voltage 1.5
–––
Gate Threshold Voltage
3.5
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
–––
Zero Gate Voltage Collector Current –––
–––
Diode Forward Voltage Drop
–––
–––
Gate-to-Emitter Leakage Current
–––
––– ––– V
0.3 ––– V/°C
1.80 2.20
2.20 2.50 V
4.5 5.5 V
-10 ––– mV/°C
7.0 ––– S
3.0 150 µA
300 700
1.30 1.45
1.30 1.45 V
––– ±100 nA
VGE = 0V, IC = 500µA
VGE = 0V, IC = 1.0mA, (25°C-150°C)
IC = 10A, VGE = 15V
5, 6,7
IC = 10A, VGE = 15V TJ = 150°C 9,10,11
VCE = VGE, IC = 250µA
9,10,11
VCE = VGE, IC = 1.0mA, (25°C-150°C) 12
VCE = 50V, IC = 10A, PW=80µs
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 10A
IC = 10A
TJ = 150°C
8
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Cies
Coes
Cres
RBSOA
SCSOA
Erec
trr
Irr
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operting Area
Short Circuit Safe Operting Area
Reverse Recovery energy of the diode
Diode Reverse Recovery time
Diode Peak Reverse Recovery Current
Min. Typ. Max.
––– 38 –––
––– 4.3 –––
––– 16.3 –––
––– 140 247
––– 250 360
––– 390 607
––– 30 39
––– 20 29
––– 230 262
––– 23 32
––– 230 340
––– 350 464
––– 580 804
––– 30 39
––– 20 28
––– 250 274
––– 26 34
––– 620 –––
––– 62 –––
––– 22 –––
FULL SQUARE
10 ––– –––
––– 245 330
––– 90 105
––– 19 22
Units
nC
µJ
ns
µJ
ns
pF
µs
µJ
ns
A
Conditions
IC = 10A
VCC = 400V
VGE = 15V
IC = 10A, VCC = 400V
VGE = 15V,RG = 47Ω, L = 200µH
Ls = 150nH
TJ = 25°C ƒ
IC = 10A, VCC = 400V
VGE = 15V, RG = 47Ω, L = 200µH
Ls = 150nH, TJ = 25°C
Ref.Fig.
CT1
CT4
CT4
IC = 10A, VCC = 400V
CT4
VGE = 15V,RG = 47Ω, L = 200µH
13,15
Ls = 150nH
TJ = 150°C ƒ WF1WF2
IC = 10A, VCC = 400V
14, 16
VGE = 15V, RG = 47Ω, L = 200µH
CT4
Ls = 150nH, TJ = 150°C
WF1
WF2
VGE = 0V
VCC = 30V
f = 1.0MHz
TJ = 150°C, IC = 44A, Vp =600V
4
VCC = 500V, VGE = +15V to 0V,RG = 47CT2
TJ = 150°C, Vp =600V,RG = 47
CT3
VCC = 360V, VGE = +15V to 0V
TJ = 150°C
VCC = 400V, IF = 10A, L = 200µH
VGE = 15V,RG = 47Ω, Ls = 150nH
WF4
17,18,19
20, 21
CT4,WF3
Note  to „ are on page 15
2
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Part Number GB10B60KD
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
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GB10B60KD Datasheet PDF






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International Rectifier





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