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International Rectifier Electronic Components Datasheet

GB10RF120K Datasheet

IGBT PIM MODULE

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IGBT PIM MODULE
Features
• Low VCE (on) Non Punch Through IGBT Technology
• Low Diode VF
• 10μs Short Circuit Capability
• Square RBSOA
• HEXFRED Antiparallel Diode with Ultrasoft
Reverse Recovery Characteristics
• Positive VCE (on) Temperature Coefficient
• Ceramic DBC Substrate
• Low Stray Inductance Design
• TOTALLY LEAD-FREE
Benefits
• Benchmark Efficiency for Motor Control
• Rugged Transient Performance
• Low EMI, Requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Low Junction to Case Thermal Resistance
• UL Approved E78996
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Absolute Maximum Ratings
Inverter
Parameter
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Collector Current
Input Rectifier
Brake
Diode Maximum Forward Current
Power Dissipation
Repetitive Peak Reverse Voltage
Average Output Current
Surge Current (Non Repetitive)
I2 t (Non Repetitive)
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Collector Current
Power Dissipation
Maximum Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Thermal and Mechanical Characteristics
Parameter
Junction-to-Case Inverter IGBT Thermal Resistance
Junction-to-Case Inverter FRED Thermal Resistance
Junction-to-Case Brake DIODE Thermal Resistance
Junction-to-Case Brake IGBT Thermal Resistance
Junction-to-Case Input Rectifier Thermal Resistance
Case-to-Sink, flat, greased surface
Mounting Torque (M5)
Weight
1
ECONO2 PIM
Bulletin I27278 01/07
GB10RF120K
VCES = 1200V
IC = 13A @ TC=80°C
tsc > 10μs @ TJ =150°C
VCE(on) typ. = 2.68V
R
23
24
Symbol
VCES
VGES
IC
ICM
IFM
PD
VRRM
IF(AV)
IFSM
I2t
VCES
VGES
IC
ICM
PD
TJ
TSTG
VISOL
Test Conditions
Continuos
Pulsed
Pulsed
One IGBT
25°C / 80°C
25°C
25°C
25°C
50/60Hz sine pulse
80°C
Rated VRRM applied, 10ms,
sine pulse
Continuous
Pulsed
One IGBT
25°C / 80°C
25°C
25°C
AC (1 min)
Ratings
1200
±20
20 / 13
40
40
88
1600
13
120
72
1200
±20
20 / 13
40
88
150
-40 to +125
2500
Units
V
A
W
V
A
A2s
V
A
W
°C
V
Symbol
Min
Typical
Maximum Units
-
-
1.42
°C/W
- - 1.97
RθJC
-
-
- 1.97
- 1.42
- - 1.11
RθCS
-
2.7
0.05
-
-
3.3 Nm
170 g
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International Rectifier Electronic Components Datasheet

GB10RF120K Datasheet

IGBT PIM MODULE

No Preview Available !

GB10RF120K
Bulletin I27278 11/06
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Inverter
IGBT
Parameter
BV(CES)
Collector-to-Emitter Breakdown Voltage
ΔV(BR)CES/ΔTJTemp. Coefficient of Breakdown Voltage
VCE(ON)
Collector-to-Emitter Voltage
VGE(th)
Gate Threshold Voltage
ΔVGE(th)/ΔTJ Thresold Voltage temp. coefficient
ICES Zero Gate Voltage Collector Current
IGES
QG
QGE
QGC
EON
EOFF
ETOT
EON
EOFF
ETOT
td(on)
tr
td(off)
tf
Cies
Coes
Cres
RBSOA
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
Min. Typ. Max. Units
1200 -
-V
- 1.33 - V/°C
- 2.68 3.03 V
- 3.68 4.55
- 3.19 3.61
- 4.52 5.17
4-6
- -9.7 - mV/°C
- - 100 μA
- 750 -
- - ±200 nA
- 48 72
- 8 15 nC
- 22 33
- 0.96 1.44 mJ
- 0.46 0.70
- 1.42 2.14
- 1.25 1.88 mJ
- 0.69 0.95
- 1.94 2.83
- 86 130 ns
- 21 32
- 118 180
- 274 410
- 750 1150 pF
- 190 290
- 20 35
FULL SQUARE
10 -
- μs
Conditions
VGE = 0 IC = 500μA
VGE = 0 IC = 1mA (25°C - 125°C)
IC = 10A VGE = 15V
IC = 20A VGE = 15V
IC = 10A VGE = 15V TJ = 125°C
IC = 20A VGE = 15V TJ = 125°C
VCE = VGE IC = 250μA
VCE = VGE IC = 1mA (25°C-125°C)
VGE = 0 VCE = 1200V
VGE = 0 VCE = 1200V Tj = 125°C
VGE = ±20V
IC = 10A
VCC = 600A
VGE = 15V
IC = 10A VCC = 600V
VGE = 15V RG = 22Ω L = 1mH
Tj = 25°C 1
IC = 10A VCC = 600V
VGE = 15V RG = 22Ω L = 1mH
Tj = 125°C 1
IC = 10A VCC = 600V
VGE = 15V RG = 22Ω L = 1mH
Tj = 125°C
VGE = 0
VCC = 30V
f = 1Mhz
Tj = 125°C IC = 40A
RG = 22Ω VGE = 15V to 0
Tj = 150°C
Inverter
IGBT
Irr
Diode Peak Rev. Recovery Current
VCC = 960V VP = 1200V
RG = 22Ω VGE = 15V to 0
- 22 - A Tj = 125°C
VCC = 600V IF = 10A L = 1mH
VGE = 15V RG = 22Ω
VFM Diode Forward Voltage Drop
2.02
2.53
2.13
2.81
2.50
3.35
2.63
3.57
V
IF = 10A
IF = 20A
IF = 10A Tj = 125°C
IF = 20A Tj = 125°C
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Part Number GB10RF120K
Description IGBT PIM MODULE
Maker International Rectifier
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GB10RF120K Datasheet PDF






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