GB10RF120K
Overview
- Low VCE (on) Non Punch Through IGBT Technology
- Low Diode VF
- 10μs Short Circuit Capability
- Square RBSOA
- HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
- Positive VCE (on) Temperature Coefficient
- Ceramic DBC Substrate
- Low Stray Inductance Design
- TOTALLY LEAD-FREE VCES = 1200V IC = 13A @ TC=80°C tsc > 10μs @ TJ =150°C ECONO2 PIM VCE(on) typ. = 2.68V Benefits * * * * * *
- Benchmark Efficiency for Motor Control Rugged Transient Performance Low EMI, Requires Less Snubbing Direct Mounting to Heatsink PCB Solderable Terminals Low Junction to Case Thermal Resistance UL Approved E78996 R 23 24
