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International Rectifier Electronic Components Datasheet

GB20B60PD1 Datasheet

IRGB20B60PD1

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PD - 94613A
SMPS IGBT IRGB20B60PD1
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
Applications
Telecom and Server SMPS
PFC and ZVS SMPS Circuits
Uninterruptable Power Supplies
Consumer Electronics Power Supplies
Features
NPT Technology, Positive Temperature Coefficient
Lower VCE(SAT)
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.05V
@ VGE = 15V IC = 13.0A
Equivalent MOSFET
Parameters 
RCE(on) typ. = 158m
ID (FET equivalent) = 20A
Benefits
Parallel Operation for Higher Current Applications
Lower Conduction Losses and Switching Losses
Higher Switching Frequency up to 150kHz
GCE
TO-220AB
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFRM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
dClamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
eMaximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
Max.
600
40
22
80
80
10
4
16
±20
215
86
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
0.58
5.0
–––
80
–––
Units
V
A
V
W
°C
Units
°C/W
g (oz)
1 www.irf.com
12/10/03


International Rectifier Electronic Components Datasheet

GB20B60PD1 Datasheet

IRGB20B60PD1

No Preview Available !

IRGB20B60PD1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600 — — V VGE = 0V, IC = 500µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
— 0.32 — V/°C VGE = 0V, IC = 1mA (25°C-125°C)
RG Internal Gate Resistance
— 4.3 — 1MHz, Open Collector
— 2.05 2.35
IC = 13A, VGE = 15V
VCE(on)
Collector-to-Emitter Saturation Voltage
— 2.50 2.80 V IC = 20A, VGE = 15V
— 2.65 3.00
IC = 13A, VGE = 15V, TJ = 125°C
— 3.30 3.70
IC = 20A, VGE = 15V, TJ = 125°C
VGE(th)
Gate Threshold Voltage
3.0 4.0 5.0 V IC = 250µA
VGE(th)/TJ Threshold Voltage temp. coefficient
— -11 — mV/°C VCE = VGE, IC = 1.0mA
gfe Forward Transconductance
— 19 — S VCE = 50V, IC = 40A, PW = 80µs
ICES Collector-to-Emitter Leakage Current
— 1.0 250 µA VGE = 0V, VCE = 600V
— 0.1 — mA VGE = 0V, VCE = 600V, TJ = 125°C
VFM Diode Forward Voltage Drop
— 1.5 1.8 V IF = 4.0A, VGE = 0V
— 1.4 1.7
IF = 4.0A, VGE = 0V, TJ = 125°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V, VCE = 0V
Ref.Fig
4, 5,6,8,9
7,8,9
10
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig
Qg Total Gate Charge (turn-on)
— 68 102
IC = 13A
17
Qgc Gate-to-Collector Charge (turn-on)
— 24 36 nC VCC = 400V
CT1
Qge Gate-to-Emitter Charge (turn-on)
— 10 15
VGE = 15V
Eon Turn-On Switching Loss
— 95 140
IC = 13A, VCC = 390V
CT3
Eoff
Etotal
Turn-Off Switching Loss
Total Switching Loss
— 100 145 µJ VGE = +15V, RG = 10, L = 200µH
— 195 285
fTJ = 25°C
td(on)
Turn-On delay time
— 20 26
IC = 13A, VCC = 390V
CT3
tr
td(off)
Rise time
Turn-Off delay time
— 5.0 7.0 ns VGE = +15V, RG = 10, L = 200µH
— 115 135
TJ = 25°C
tf Fall time
— 6.0 8.0
Eon Turn-On Switching Loss
— 165 215
IC = 13A, VCC = 390V
CT3
Eoff
Etotal
Turn-Off Switching Loss
Total Switching Loss
— 150 195 µJ VGE = +15V, RG = 10, L = 200µH
— 315 410
fTJ = 125°C
11,13
WF1,WF2
td(on)
Turn-On delay time
— 19 25
IC = 13A, VCC = 390V
CT3
tr
td(off)
Rise time
Turn-Off delay time
— 6.0 8.0 ns VGE = +15V, RG = 10, L = 200µH
— 125 140
TJ = 125°C
12,14
WF1,WF2
tf Fall time
— 13 17
Cies Input Capacitance
— 1560 —
VGE = 0V
16
Coes Output Capacitance
— 95 —
VCC = 30V
Cres
gCoes eff.
gCoes eff. (ER)
Reverse Transfer Capacitance
Effective Output Capacitance (Time Related)
Effective Output Capacitance (Energy Related)
— 20 — pF f = 1Mhz
— 83 —
VGE = 0V, VCE = 0V to 480V
— 61 —
15
TJ = 150°C, IC = 80A
3
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 480V, Vp =600V
CT2
Rg = 22, VGE = +15V to 0V
trr Diode Reverse Recovery Time
— 28 42 ns TJ = 25°C IF = 4.0A, VR = 200V,
19
— 38 57
TJ = 125°C di/dt = 200A/µs
Qrr Diode Reverse Recovery Charge
— 40 60 nC TJ = 25°C IF = 4.0A, VR = 200V,
21
— 70 105
TJ = 125°C di/dt = 200A/µs
Irr Peak Reverse Recovery Current
— 2.9 5.2 A TJ = 25°C IF = 4.0A, VR = 200V,
19,20,21,22
Notes:
— 3.7 6.7
TJ = 125°C di/dt = 200A/µs
CT5
 RCE(on) typ. = equivalent on-resistance = VCE(on) typ. / IC, where VCE(on) typ. = 2.05V and IC = 13A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25°C for
applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
‚ VCC = 80% (VCES), VGE = 15V, L = 28µH, RG = 22Ω.
ƒ Pulse width limited by max. junction temperature.
„ Energy losses include "tail" and diode reverse recovery. Data generated with use of Diode 8ETH06.
… Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.
Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.
2 www.irf.com


Part Number GB20B60PD1
Description IRGB20B60PD1
Maker International Rectifier
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