GB25RF120K
Features
- Low VCE (on) Non Punch Through IGBT Technology
- Low Diode VF
- 10µs Short Circuit Capability
- Square RBSOA
- HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics
- Positive VCE (on) Temperature Coefficient
- Ceramic DBC Substrate
- Low Stray Inductance Design
VCES = 1200V IC = 25A, TC=80°C tsc > 10µs, TJ=150°C
ECONO2 PIM
VCE(on) typ. = 2.40V
Benefits
- Benchmark Efficiency for Motor Control
- Rugged Transient Performance
- Low EMI, Requires Less Snubbing
- Direct Mounting to Heatsink
- PCB Solderable Terminals
- Low Junction to Case Thermal Resistance
- UL Listed
Absolute Maximum Ratings (TJ =25°C, unless otherwise indicated)
Parameter
Inverter Collector-to-Emitter Voltage Gate-to-Emitter Voltage Collector Current Diode Maximum Forward Current Power Dissipation Input Repetitive Peak Reverse Voltage Surge Current (Non Repetitive) I t (Non Repetitive) Brake Collector-to-Emitter Voltage Gate-to-Emitter Voltage Collector Current Power Dissipation Repetitive Peak Reverse Voltage Maximum Operating Junction Temperature Storage Temperature Range Isolation Voltage
Symbol
VCES VGES IC ICM IFM d PD VRRM...
