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International Rectifier Electronic Components Datasheet

GB25RF120K Datasheet

IGBT PIM MODULE

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IGBT PIM MODULE
Features
• Low VCE (on) Non Punch Through IGBT Technology
• Low Diode VF
• 10µs Short Circuit Capability
• Square RBSOA
• HEXFRED Antiparallel Diode with Ultrasoft Diode
Reverse Recovery Characteristics
• Positive VCE (on) Temperature Coefficient
• Ceramic DBC Substrate
• Low Stray Inductance Design
Benefits
• Benchmark Efficiency for Motor Control
• Rugged Transient Performance
• Low EMI, Requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Low Junction to Case Thermal Resistance
• UL Listed 
ECONO2 PIM
PD - 94552
GB25RF120K
VCES = 1200V
IC = 25A, TC=80°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 2.40V
Absolute Maximum Ratings (TJ =25°C, unless otherwise indicated)
Parameter
Symbol Test Conditions
Inverter
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Collector Current
Diode Maximum Forward Current
Power Dissipation
Input Repetitive Peak Reverse Voltage
Rectifier Average Output Current
Surge Current (Non Repetitive)
I2t (Non Repetitive)
Brake Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Collector Current
Power Dissipation
Repetitive Peak Reverse Voltage
Maximum Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
VCES
VGES
IC
ICM
IFM d
PD
VRRM
IF(AV)
IFSM
I2t
VCES
VGES
IC
ICM
PD
VRRM
TJ
TSTG
VISOL
Continuous
1 device
25°C / 80°C
25°C
25°C
25°C
50/60Hz sine pulse
80°C
Rated VRRM applied, 10ms,
sine pulse
Continuous
1 device
25°C / 80°C
25°C
25°C
——
——
AC(1min.)
Thermal and Mechanical Characteristics
Parameter
Junction-to-Case Inverter IGBT Thermal Resistance
Junction-to-Case Inverter FRED Thermal Resistance
Junction-to-Case Brake IGBT Thermal Resistance
Junction-to-Case Brake Diode Thermal Resistance
Junction-to-Case Input Rectifier Thermal Resistance
Mounting Torque (M5)
Symbol
RTHJC
Min
2.7
Typical
1
Ratings
1200
±20
40 / 25
80
80
198
1600
20
250
316
1200
±20
25 / 15
50
104
1200
150
-40 to +125
2500
Units
V
A
W
V
A
A2s
V
A
W
V
°C
V
Maximum
0.63
1.0
1.2
2.3
0.85
3.3
Units
°C/W
Nm
www.irf.com
10/17/02


International Rectifier Electronic Components Datasheet

GB25RF120K Datasheet

IGBT PIM MODULE

No Preview Available !

GB25RF120K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Inverter BVCES
Collector-to-Emitter Breakdown Voltage
1200 — —
V VGE = 0V, IC = 500µA
IGBT V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 1.0 — V/°C VGE = 0V, IC = 1mA (25°C-125°C)
VCE(on)
Collector-to-Emitter Voltage
— 2.40 2.70 V IC = 25A, VGE = 15V
— 2.95 3.30
IC = 40A, VGE = 15V
— 2.85 —
IC = 25A, VGE = 15V, TJ = 125°C
— 3.55 —
IC = 40A, VGE = 15V, TJ = 125°C
VGE(th)
Gate Threshold Voltage
4.0 5.0 6.0
VCE = VGE, IC = 250µA
VGE(th)
Threshold Voltage temp. coefficient
— -10 — mV/°C VCE = VGE, IC = 1mA (25°C-125°C)
ICES Zero Gate Voltage Collector Current
— 11 100 µA VGE = 0V, VCE = 1200V
— 750 —
VGE = 0V, VCE = 1200V, TJ = 125°C
IGES Gate-to-Emitter Leakage Current
— — ±200 nA VGE = ±20V
Qg Total Gate Charge (turn-on)
— 175 265
IC = 25A
Qge Gate-to-Emitter Charge (turn-on)
— 17.5 30
nC VCC = 400V
Qgc Gate-to-Collector Charge (turn-on)
— 81 125
VGE = 15V
Eon Turn-On Switching Loss
— 2450 4450
IC = 25A, VCC = 600V
Eoff Turn-Off Switching Loss
Etot Total Switching Loss
— 2050 3200
— 4500 7650
µJ VGE = 15V, RG = 10, L = 400µH
eTJ = 25°C
Eon Turn-On Switching Loss
— 3350 5650
IC = 25A, VCC = 600V
Eoff Turn-Off Switching Loss
Etot Total Switching Loss
— 2850 3850
— 6200 9500
µJ VGE = 15V, RG = 10, L = 400µH
eTJ = 125°C
td(on) Turn-On delay time
— 80 104
IC = 25A, VCC = 600V
tr Rise time
— 50 70
ns VGE = 15V, RG = 10, L = 400µH
td(off)
Turn-Off delay time
— 510 1000
TJ = 125°C
tf Fall time
— 230 299
Cies Input Capacitance
— 2370 —
VGE = 0V
Coes Output Capacitance
— 455 —
pF VCC = 30V
Cres Reverse Transfer Capacitance
— 60 —
f = 1.0Mhz
RBSOA Reverse Bias Safe Operating Area
FULL SQUARE
TJ = 150°C, IC = 80A
RG = 10, VGE = +15V to 0V
TJ = 150°C
SCSOA Short Circuit Safe Operating Area
10 — —
µs VCC = 900V, VP = 1200V
RG = 10, VGE = +15V to 0V
Inverter
TJ = 125°C
FRED Irr
Diode Peak Reverse Recovery Current
— 35 —
A VCC = 600V, IF = 25A, L = 400µH
VGE = 15V, RG = 10
— 1.90 2.35 V IF = 25A
VFM Diode Forward Voltage Drop
— 2.25 2.80
IF = 40A
— 2.00 —
IF = 25A, TJ = 125°C
— 2.45 —
IF = 40A, TJ = 125°C
1,2
4,5
3,4,5
7
CT1
CT4
9,11
CT4
WF1,2
10,12
CT4
WF1
WF2
6
CT2
CT3
WF4
13,14,15
CT4
8
2 www.irf.com


Part Number GB25RF120K
Description IGBT PIM MODULE
Maker International Rectifier
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GB25RF120K Datasheet PDF






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