* Low VCE (on) Non Punch Through IGBT Technology
* Low Diode VF
* 10µs Short Circuit Capability
* Square RBSOA
* HEXFRED Antiparallel Diode with Ultra.

TJ is limited to +125°C. (See File E78996). ‚ Power dependent on temperature. TJ not to exceed TJ max. ƒ Energy losses .

GB25MPS17-247

GB200

GB200A

GB200TS60NPBF

GB201

GB201A

GB20B60PD1

GB20NB32LZ

GB20NB32LZ-1

GB20NC60V

GB20SLT12-247

GB20V60DF

GB2X100MPS12-227

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts