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International Rectifier Electronic Components Datasheet

GB30RF60K Datasheet

IGBT PIM MODULE

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IGBT PIM MODULE
Features
• Low VCE (on) Non Punch Through IGBT Technology
• Low Diode VF
• 10μs Short Circuit Capability
• Square RBSOA
• HEXFRED Antiparallel Diode with Ultrasoft
Reverse Recovery Characteristics
• Positive VCE (on) Temperature Coefficient
• Ceramic DBC Substrate
• Low Stray Inductance Design
• TOTALLY LEAD-FREE
Benefits
• Benchmark Efficiency for Motor Control
• Rugged Transient Performance
• Low EMI, Requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Low Junction to Case Thermal Resistance
Absolute Maximum Ratings
Inverter
Parameter
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Collector Current
Input Rectifier
Brake
Diode Maximum Forward Current
Power Dissipation
Repetitive Peak Reverse Voltage
Average Output Current
Surge Current (Non Repetitive)
I2 t (Non Repetitive)
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Collector Current
Power Dissipation
Repetitive Peak Reverse Voltage
Maximum Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Thermal and Mechanical Characteristics
Parameter
Junction-to-Case Inverter IGBT Thermal Resistance
Junction-to-Case Inverter FRED Thermal Resistance
Junction-to-Case Brake DIODE Thermal Resistance
Junction-to-Case Brake IGBT Thermal Resistance
Junction-to-Case Input Rectifier Thermal Resistance
Case-to-Sink, flat, greased surface
Mounting Torque (M5)
Weight
Document Number: 94479
ECONO2 PIM
Bulletin I27303 01/07
GB30RF60K
VCES = 600V
IC = 27A @ TC=80°C
tsc > 10μs @ TJ =150°C
VCE(on) typ. = 2.04V
R
23
24
Symbol
VCES
VGES
ICwww.DataSheet.net/
ICM
IFM
PD
VRRM
IF(AV)
IFSM
I2t
VCES
VGES
IC
ICM
PD
VRRM
TJ
TSTG
VISOL
Test Conditions
Ratings
600
±20
Continuos
25°C / 80°C
50 / 27
Pulsed
25°C
100
25°C
100
One IGBT
25°C
129
800
50/60Hz sine pulse
80°C
30
Rated VRRM applied, 10ms,
sine pulse
310
525
600
±20
Continuous
25°C / 80°C
30 / 20
Pulsed
25°C
60
One IGBT
25°C
100
600
150
-40 to +125
AC (1 min)
2500
Units
V
A
W
V
A
A2s
V
A
W
V
°C
V
Symbol
Min
Typical
Maximum Units
-
-
0.97
°C/W
- - 1.42
RθJC
-
-
- 2.44
- 1.25
- - 1.03
RθCS
-
2.7
0.05
-
-
3.3 Nm
170 g
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.co.kr/


International Rectifier Electronic Components Datasheet

GB30RF60K Datasheet

IGBT PIM MODULE

No Preview Available !

GB30RF60K
Bulletin I27303 01/07
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Inverter BV(CES)
Parameter
Min. Typ. Max. Units Conditions
Collector-to-Emitter Breakdown Voltage 600 -
- V VGE = 0 IC = 500μA
IGBT
ΔV(BR)CES/ΔTJTemp. Coefficient of Breakdown Voltage - 0.7 - V/°C VGE = 0 IC = 1mA (25°C - 125°C)
VCE(ON)
Collector-to-Emitter Voltage
- 2.04 2.65 V IC = 30A VGE = 15V
- 2.60 3.62
IC = 50A VGE = 15V
- 2.31 2.80
IC = 30A VGE = 15V TJ = 125°C
- 3.01 2.77
IC = 50A VGE = 15V TJ = 125°C
VGE(th)
Gate Threshold Voltage
3.5 - 5.5
VCE = VGE IC = 250μA
ΔVGE(th)/ΔTJ Thresold Voltage temp. coefficient
ICES Zero Gate Voltage Collector Current
- -10 - mV/°C VCE = VGE IC = 1mA (25°C-125°C)
- - 100 μA VGE = 0 VCE = 600V
- 400 -
VGE = 0 VCE = 600V Tj = 125°C
IGES Gate-to-Emitter Leakage Current
- - ±200 nA VGE = ±20V
QG Total Gate Charge (turn-on)
- 105 158
IC = 30A
QGE Gate-to-Emitter Charge (turn-on)
- 14 21 nC VCC = 300V
QGC
Gate-to-Collector Charge (turn-on)
- 51 76
VGE = 15V
EON Turn-On Switching Loss
- 491 737 μJ IC = 30A VCC = 300V
EOFF
ETOT
Turn-Off Switching Loss
Total Switching Loss
- 223 335
- 714 1072
VGE = 15V RG = 22Ω L = 200μH
Tj = 25°C 1
EON Turn-On Switching Loss
- 613 920 μJ IC = 30A VCC = 300V
EOFF
ETOT
Turn-Off Switching Loss
Total Switching Loss
- 417 626
- 1030 1546
VGE = 15V RG = 22Ω L = 200μH
Tj = 125°C 1
td(on)
Turn-On delay time
- 132 198 ns IC = 30A VCC = 300V
tr Rise time
- 33 50
VGE = 15V RG = 22Ω L = 200μH
td(off)
Turn-Off delay time
- 153 229
Tj = 125°C
tf Fall time
- 88 132
Cies Input Capacitance
- 1834 2751 pFwww.DataSheet.net/
VGE = 0
Coes Output Capacitance
- 459 690
VCC = 30V
Cres Reverse Transfer Capacitance
- 54 81
f = 1Mhz
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
Tj = 150°C IC = 60A
RG = 22Ω VGE = 15V to 0
SCSOA
Short Circuit Safe Operating Area
10 -
- μs IP = 220A to 310A
Inverter
Diode
Irr
Diode Peak Rev. Recovery Current
VCC = 300V
RG = 47Ω VGE = 15V to 0
- 43 - A Tj = 125°C
VCC = 300V IF = 30A L = 200μH
VGE = 15V RG = 22Ω
VFM Diode Forward Voltage Drop
- 1.31 1.81 V
- 1.52 2.40
- 1.25 1.68
- 1.47 2.14
IF = 30A
IF = 50A
IF = 30A Tj = 125°C
IF = 50A Tj = 125°C
Document Number: 94479
www.vishay.com
2
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number GB30RF60K
Description IGBT PIM MODULE
Maker International Rectifier
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GB30RF60K Datasheet PDF






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