GB50XF120K Datasheet | International Rectifier

Features • • • • • Low VCE (on) Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient • Ceramic DBC Substrate • Low Stray Inductance Design VCES = 1200V IC = 50A @ TC=80°C tsc > 10µs @ TJ=150°C ECONO2 6PACK VCE(on) typ. = 2.45V Benefits • • • • • • • Benchmark Efficiency for Motor Control Rugged Transient Performance Low EMI, Requires Less Snubbing Direct Mounting to Heatsink PCB Solderable Terminals Low Junction to Case Thermal Resistance UL Approved E78996 Absolute Maximum Ratings Parameter VCES IC @ Tc=25°C IC @ Tc=80°C ICM ILM IF @ Tc=25°C IF @ Tc=80°C IFM VGE PD @ Tc=25°C PD @ Tc=80°C TJ TSTG VISOL Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current (Ref. Fig. C.T.5) Clamped Inductive Load Current Diode Continuous Forward Current Diode Continuous Forward Current Pulsed Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation (IGBT and Diode) Maximum Power Dissipation (IGBT and Diode) Maximum Operating Junction Temperature Storage Temperature Range Isolation Voltage Max. 1200 75 50 150 150 75 50 150 ±20 329 184 150 -40 to +125 AC 2500 (MIN) Units V W °C V Thermal and Mechanical Characteristics Parameter RθJC (IGBT) RθJC (Diode) RθCS (Module) Junction-to-Case IGBT Junction-to-Case Diode Case-to-Sink, flat, greased surface Mounting Torque (M5) Weight Min - Typical 0.05 170 Maximum 0.38 0.70 3.3 - Units °C/W N- m g .irf. Datasheet pdf - http://..net/ .Data Sheet.co.kr Bulletin PD - 94567 rev.B 08/03 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) BV(CES) ∆V(BR)CES/∆TJ VCE(ON) Parameter Collector-to-Emitter Breakdown Voltage Temp. Coefficient of Breakdown Voltage Collector-to-Emitter Voltage Min. Typ. Max. Units Conditions 1200 V VGE = 0 IC = 500µA VGE (th) ∆VGE (th)/ ∆TJ...