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International Rectifier Electronic Components Datasheet

GB50XF120K Datasheet

IGBT SIXPACK MODULE

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IGBT SIXPACK MODULE
Features
• Low VCE (on) Non Punch Through IGBT Technology
• Low Diode VF
• 10µs Short Circuit Capability
• Square RBSOA
• HEXFRED Antiparallel Diode with Ultrasoft
Reverse Recovery Characteristics
• Positive VCE (on) Temperature Coefficient
• Ceramic DBC Substrate
• Low Stray Inductance Design
Benefits
• Benchmark Efficiency for Motor Control
• Rugged Transient Performance
• Low EMI, Requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Low Junction to Case Thermal Resistance
• UL Approved E78996
ECONO2 6PACK
Absolute Maximum Ratings
Parameter
VCES
IC @ Tc=25°C
IC @ Tc=80°C
ICM
ILM
IF @ Tc=25°C
IF @ Tc=80°C
IFM
VGE
PD @ Tc=25°C
PD @ Tc=80°C
TJ
TSTG
VISOL
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current (Ref. Fig. C.T.5)
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Pulsed Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation (IGBT and Diode)
Maximum Power Dissipation (IGBT and Diode)
Maximum Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Bulletin PD - 94567 rev.B 08/03
GB50XF120K
VCES = 1200V
IC = 50A @ TC=80°C
tsc > 10µs @ TJ=150°C
VCE(on) typ. = 2.45V
Max.
1200
75
50
150
150
75
50
150
±20
329
184
150
-40 to +125
AC 2500 (MIN)
Units
V
A
V
W
°C
V
Thermal and Mechanical Characteristics
RθJC (IGBT)
RθJC (Diode)
RθCS (Module)
Parameter
Junction-to-Case IGBT
Junction-to-Case Diode
Case-to-Sink, flat, greased surface
Mounting Torque (M5)
Weight
Min
Typical
Maximum Units
-
-
0.38
°C/W
- - 0.70
- 0.05 -
2.7 - 3.3 N*m
- 170 - g
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Datasheet pdf - http://www.DataSheet4U.net/


International Rectifier Electronic Components Datasheet

GB50XF120K Datasheet

IGBT SIXPACK MODULE

No Preview Available !

www.DataSheet.co.kr
GB50XF120K
Bulletin PD - 94567 rev.B 08/03
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
BV(CES)
Collector-to-Emitter Breakdown Voltage
1200 - -
V VGE = 0 IC = 500µA
V(BR)CES/TJ Temp. Coefficient of Breakdown Voltage
- 0.31 - V/°C VGE = 0 IC = 1mA (25°C - 125°C)
VCE(ON)
Collector-to-Emitter Voltage
- 2.45 2.65 V IC = 50A VGE = 15V
- 2.85 3.15
IC = 75A VGE = 15V
- 2.85 -
IC = 50A VGE = 15V TJ = 125°C
- 3.45 -
IC =75A VGE = 15V TJ = 125°C
VGE(th)
Gate Threshold Voltage
4.0 4.9 6.0
VCE = VGE IC = 250µA
VGE(th)/TJ Thresold Voltage temp. coefficient
- -12 - mV/°C VCE = VGE IC = 1mA (25°C-125°C)
ICES Zero Gate Voltage Collector Current
- - 100 µA VGE = 0 VCE = 1200V
- 1000 -
VGE = 0 VCE = 1200V Tj = 125°C
VFM Diode Forward Voltage Drop
- 1.95 2.25 V IF = 50A
- 2.20 2.60
IF = 75A
- 2.05 -
IF = 50A Tj = 125°C
- 2.40 -
IF = 75A Tj = 125°C
IGES Gate-to-Emitter Leakage Current
- - ±200 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
QG
QGE
QGC
EON
EOFF
ETOT
EON
EOFF
ETOT
td(on)
tr
td(off)
tf
Cies
Coes
Cres
RBSOA
SCSOA
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Irr Diode Peak Rev. Recovery Current
 Energy losses include "tail" and diode reverse recovery.
- 355 535
- 35 55
- 165 250
- 3600 4635
- 3740 4780
- 7340 9415
- 5050 7100
- 5525 7750
- 10575 14850
- 60 80
- 40 60
- 570 665
- 205 270
- 4945 -
- 885 -
- 100 -
FULL SQUARE
nC
µJ
µJ
ns
pF
10 -
- µs
- 87 -
A
IC = 50A
VCC = 600A
VGE = 15V
IC = 50A VCC = 600V
VGE = 15V RG = 10L = 400µH
Tj = 25°C 
IC = 50A VCC = 600V
VGE = 15V RG = 10L = 400µH
Tj = 125°C 
IC = 50A VCC = 600V
VGE = 15V RG = 10L =400µH
Tj = 125°C
VGE = 0
VCC = 30V
f = 1Mhz
Tj = 150°C IC = 150A
RG =10VGE = 15V to 0
Tj = 150°C
VCC = 900V VP = 1200V
RG = 10VGE = 15V to 0
Tj = 125°C
VCC = 600V IF = 50A L = 400µH
VGE = 15V RG = 10
2 www.irf.com Datasheetpdf-http://www.DataSheet4U.net/


Part Number GB50XF120K
Description IGBT SIXPACK MODULE
Maker International Rectifier
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GB50XF120K Datasheet PDF






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