GB5B120KD
GB5B120KD is IRGB5B120KD manufactured by International Rectifier.
Features
- Low VCE (on) Non Punch Through IGBT Technology.
- Low Diode VF.
- 10µs Short Circuit Capability.
- Square RBSOA. ..
- Ultrasoft Diode Reverse Recovery Characteristics.
- Positive VCE (on) Temperature Coefficient.
- TO-220 Package.
VCES = 1200V IC = 6.0A, TC=100°C
G E tsc > 10µs, TJ=150°C n-channel
Benefits
- Benchmark Efficiency for Motor Control.
- Rugged Transient Performance.
- Low EMI.
- Excellent Current Sharing in Parallel Operation.
VCE(on) typ. = 2.75V
TO-220AB
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ T C = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Max.
1200 12 6.0 24 24 12 6.0 24 ± 20 89 36 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf- in (1.1 N- m)
Units
°C
Thermal Resistance
Parameter
RθJC RθJC RθCS RθJA Wt Junction-to-Case
- IGBT Junction-to-Case
- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
- -
- -
- -
- -
- -
- -
- -
-...
