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International Rectifier Electronic Components Datasheet

GB5B120KD Datasheet

IRGB5B120KD

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PD - 94385E
IRGB5B120KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
www.DataSheet4UU.lctraosmoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• TO-220 Package.
C
G
E
n-channel
VCES = 1200V
IC = 6.0A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 2.75V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current 
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
TO-220AB
Max.
1200
12
6.0
24
24
12
6.0
24
± 20
89
36
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
1.4
2.8
–––
62
–––
Units
°C/W
g (oz)
1
8/18/04


International Rectifier Electronic Components Datasheet

GB5B120KD Datasheet

IRGB5B120KD

No Preview Available !

IRGB5B120KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 ––– ––– V VGE = 0V, IC = 500µA
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
Temperature Coeff. of Breakdown Voltage –––
Collector-to-Emitter Saturation Voltage –––
–––
Gate Threshold Voltage
4.0
Temperature Coeff. of Threshold Voltage –––
1.15
2.75
3.36
5.0
-11
––– V/°C
3.0
3.7 V
6.0 V
––– mV/°C
VGE = 0V, IC = 1.0mA, (25°C-125°C)
IC = 6.0A VGE = 15V
5, 6,7
IC = 6.0A VGE = 15V TJ = 125°C 9,10,11
VCE = VGE, IC = 250µA
9,10,11
VCE = VGE, IC = 1.0mA, (25°C-125°C) 12
gfe Forward Transconductance
––– 2.6 ––– S VCE = 50V, IC = 6.0A, PW=80µs
www.DataSheetI4CUE.Scom Zero Gate Voltage Collector Current
––– ––– 100 µA VGE = 0V, VCE = 1200V
––– 66 200
VGE = 0V, VCE = 1200V, TJ = 125°C
VFM Diode Forward Voltage Drop
––– 2.13 2.45
––– 2.38 2.75 V
IF = 6.0A
IF = 6.0A
TJ = 125°C
8
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
Qg
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Cies
Coes
Cres
RBSOA
SCSOA
Erec
trr
Irr
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 25 38
––– 3.7 5.6
––– 13 20
––– 390 440
––– 330 440
––– 720 880
––– 22 29
––– 19 27
––– 100 120
––– 19 25
––– 440 660
––– 370 560
––– 810 1220
––– 21 27
––– 18 25
––– 110 150
––– 22 29
––– 370 –––
––– 33 –––
––– 11 –––
nC
µJ
ns
µJ
ns
pF
Reverse Bias Safe Operting Area
FULL SQUARE
Short Circuit Safe Operting Area
µs
10 ––– –––
Reverse Recovery energy of the diode ––– 360 –––
Diode Reverse Recovery time
––– 160 –––
Diode Peak Reverse Recovery Current ––– 9.0 –––
µJ
ns
A
IC = 6.0A
VCC = 800V
VGE = 15V
IC = 6.0A, VCC = 600V
VGE = 15V,RG = 50Ω, L =3.7mH
Ls = 150nH
TJ = 25°C ‚
IC = 6.0A, VCC = 600V
VGE = 15V, RG = 50L =3.7mH
Ls = 150nH, TJ = 25°C
23
CT1
CT4
CT4
IC = 6.0A, VCC = 600V
VGE = 15V,RG = 50Ω, L =3.7mH
CT4
13,15
Ls = 150nH
TJ = 125°C ‚ WF1WF2
IC = 6.0A, VCC = 600V
14, 16
VGE = 15V, RG = 50L =3.7mH
CT4
Ls = 150nH, TJ = 125°C
WF1
WF2
VGE = 0V
VCC = 30V
22
f = 1.0MHz
TJ = 150°C, IC = 24A, Vp =1200V
4
VCC = 1000V, VGE = +15V to 0V, RG=50CT2
TJ = 150°C, Vp =1200V, RG = 50
CT3
VCC = 900V, VGE = +15V to 0V
WF4
TJ = 125°C
VCC = 600V, IF = 6.0A, L = 2.0mH
17,18,19
20, 21
VGE = 15V,RG = 50Ω, Ls = 150nH
CT4,WF3
Note:
 VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 50Ω.
‚ Energy losses include "tail" and diode reverse recovery.
2 www.irf.com


Part Number GB5B120KD
Description IRGB5B120KD
Maker International Rectifier
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GB5B120KD Datasheet PDF






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