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International Rectifier Electronic Components Datasheet

GB75YF120N Datasheet

IGBT FOUR PAK MODULE

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IGBT FOUR PAK MODULE
Features
• Square RBSOA
• HEXFRED low Qrr, low Switching Energy
• Positive VCE(on) Temperature Coefficient
• Copper Baseplate
• Low Stray Inductance Design
Bulletin I27209 01/06
GB75YF120N
ECONO2 4PAK
VCES = 1200V
IC = 75A @ TC = 67°C
VCE(on) typ. = 3.4V
Benefits
• Benchmark Efficiency for SMPS appreciation
in particular HF welding
• Rugged Transient Performance
• Low EMI, Requires Less Snubbing
• Direct Mounting to Heatsink space saving
• PCB Solderable Terminals
• Low Junction to Case Thermal Resistance
Absolute Maximum Ratings
Parameter
VCES
IC @ Tc=25°C
IC @ Tc=80°C
ICM
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IF @ Tc=25°C
IF @ Tc=80°C
IFM
VGE
PD @ Tc=25°C
PD @ Tc=80°C
TJ
TSTG
VISOL
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current (Ref. Fig. C.T.5)
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation (IGBT)
Maximum Power Dissipation (IGBT)
Maximum Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Thermal and Mechanical Characteristics
RθJC (IGBT)
RθJC (Diode)
RθCS (Module)
Parameter
Junction-to-Case IGBT
Junction-to-Case Diode
Case-to-Sink, flat, greased surface
Mounting Torque (M5)
Weight
Max.
1200
100
67
200
200
40
25
150
±20
480
270
150
-40 to +125
AC 2500 (MIN)
Units
V
A
V
W
°C
V
Min
Typical
Maximum Units
- - 0.26 °C/W
- - 1.00
-
0.05
-
2.7 - 3.3 N*m
- 170 - g
1


International Rectifier Electronic Components Datasheet

GB75YF120N Datasheet

IGBT FOUR PAK MODULE

No Preview Available !

GB75YF120N
Bulletin I27209 01/06
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
BV(CES)
Collector-to-Emitter Breakdown Voltage
1200 - - V VGE = 0 IC = 500µA
VCE(ON)
Collector-to-Emitter Voltage
- 3.4 4.0 V IC = 75A VGE = 15V
- 3.8 4.5
IC = 100A VGE = 15V
- 4.0 4.5
IC = 75A VGE = 15V TJ = 125°C
- 4.53 5.1
IC = 100A VGE = 15V TJ = 125°C
VGE(th)
Gate Threshold Voltage
4.0 5.0 6.0
VCE = VGE IC = 250µA
VGE(th)/TJ Thresold Voltage temp. coefficient
- -11 - mV/°C VCE = VGE IC = 1mA (25°C-125°C)
ICES Zero Gate Voltage Collector Current
- 7 250 µA VGE = 0 VCE = 1200V
- 580 2000
VGE = 0 VCE = 1200V Tj = 125°C
VFM Diode Forward Voltage Drop
- 3.9 5.0 V IF = 75A
- 4.43 5.8
IF = 100A
- 4.37 5.4
IF = 75A Tj = 125°C
- 5.02 6.4
IF = 100A Tj = 125°C
IGES Gate-to-Emitter Leakage Current
- - ± 200 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
QG
QGE
QGC
EON
EOFF
ETOT
EON
EOFF
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td(on)
tr
td(off)
tf
RBSOA
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
- 630 -
IC = 50A
- 65
- nC VCC = 600A
- 250 -
VGE = 15V
- 1505 - µJ IC = 50A VCC = 600V
- 2411
- 3916
-
-
VGE = 15V RG = 4.7L = 500µH
Tj = 25°C c
- 2248 - µJ IC = 50A VCC = 600V
- 3351 -
VGE = 15V RG = 4.7L = 500µH
- 7599 -
Tj = 125°C c
- 169
- 71
- 393
- ns IC = 50A VCC = 600V
- VGE = 15V RG = 4.7L =500µH
- Tj = 125°C
- 136 -
FULL SQUARE
Tj = 150°C IC = 150A
RG =10VGE = 15V to 0
10 - - µs Tj = 150°C
Irr Diode Peak Rev. Recovery Current
VCC = 900V VP = 1200V
RG = 10VGE = 15V to 0
- 1.45 2.5 A Tj = 25°C
- 2.35 4.0
Tj = 125°C
trr Diode Rev. Recovery Time
- 0.401 0.5 µs Tj = 25°C
- 0.655 0.8 µs Tj = 125°C
VCC = 600V IF = 75A
dI/ dt = 10A/µs
Qrr Total Rev. Recovery Charge
- 0.181 0.4 µC Tj = 25°C
- 0.54 1.5 µC Tj = 125°C
c Energy losses include "tail" and diode reverse recovery.
2


Part Number GB75YF120N
Description IGBT FOUR PAK MODULE
Maker International Rectifier
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GB75YF120N Datasheet PDF






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