GB75YF120N Datasheet | International Rectifier

Features - Square RBSOA - HEXFRED low Qrr, low Switching Energy - Positive VCE(on) Temperature Coefficient - Copper Baseplate - Low Stray Inductance Design VCES = 1200V IC = 75A @ TC = 67°C VCE(on) typ. = 3.4V ECONO2 4PAK Benefits - Benchmark Efficiency for SMPS appreciation in particular HF welding - Rugged Transient Performance - Low EMI, Requires Less Snubbing - Direct Mounting to Heatsink space saving - PCB Solderable Terminals - Low Junction to Case Thermal Resistance Absolute Maximum Ratings Parameter VCES IC @ Tc=25°C IC @ Tc=80°C ICM Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current (Ref. Fig. C.T.5) Clamped Inductive Load Current Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation (IGBT) Maximum Power Dissipation (IGBT) Maximum Operating Junction Temperature Storage Temperature Range Isolation Voltage Max. 1200 100 67 200 200 40 25 150 ±20 480 270 150 -40 to +125 AC 2500 (MIN) Units .. ILM IF @ Tc=25°C IF @ Tc=80°C IFM VGE PD @ Tc=25°C PD @ Tc=80°C TJ TSTG VISOL V W °C V Thermal and Mechanical Characteristics Parameter RθJC (IGBT) RθJC (Diode) RθCS (Module) Junction-to-Case IGBT Junction-to-Case Diode Case-to-Sink, flat, greased surface Mounting Torque (M5) Weight Min - Typical 0.05 170 Maximum 0.26 1.00 3.3 - Units °C/W N- m g Bulletin I27209 01/06 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) BV(CES) V CE(ON) Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min. Typ. Max. Units Conditions 1200 V VGE = 0 IC = 500µA VGE(th) ∆V GE (th)/ ∆T J ICES V FM Gate Threshold Voltage Thresold Voltage temp. coefficient Zero Gate Voltage Collector Current Diode Forward Voltage Drop 4.0 IGES Gate-to-Emitter Leakage Current 3.4 3.8 4.0 4.53 5.0 -11 7 580 3.9 4.43 4.37 5.02 4.0 4.5 4.5 5.1 6.0 250 2000 5.0 5.8 5.4 6.4 ± 200 n A V µA V...