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International Rectifier Electronic Components Datasheet

GP30B120KD-E Datasheet

IRGP30B120KD-E

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PD- 93818
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGP30B120KD-E
Motor Control Co-Pack IGBT
Features
• Low VCE(on) Non Punch Through (NPT)
Technology
• Low Diode VF (1.76V Typical @ 25A & 25°C)
www.DataSheet41U0.cµosmShort Circuit Capability
• Square RBSOA
• Ultrasoft Diode Recovery Characteristics
• Positive VCE(on) Temperature Coefficient
• Extended Lead TO-247AD Package
C
G
E
N-channel
VCES = 1200V
VCE(on) typ. = 2.28V
VGE = 15V, IC = 25A, 25°C
Benefits
• Benchmark Efficiency for Motor Control
Applications
• Rugged Transient Performance
• Low EMI
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation
• Longer leads for Easier Mounting
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current (Fig.1)
Continuous Collector Current (Fig.1)
Pulsed Collector Current (Fig.3, Fig. CT.5)
Clamped Inductive Load Current(Fig.4, Fig. CT.2)
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation (Fig.2)
Maximum Power Dissipation (Fig.2)
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw.
TO-247AD
Max.
1200
60
30
120
120
30
120
± 20
300
120
-55 to + 150
300, (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
ZθJC
www.irf.com
Parameter
Min.
Junction-to-Case - IGBT
–––
Junction-to-Case - Diode
–––
Case-to-Sink, flat, greased surface
–––
Junction-to-Ambient, typical socket mount
–––
Weight
–––
Transient Thermal Impedance Junction-to-Case (Fig.24)
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.42
0.83
–––
40
–––
Units
V
A
V
W
°C
Units
°C/W
g (oz)
1
12/14/99


International Rectifier Electronic Components Datasheet

GP30B120KD-E Datasheet

IRGP30B120KD-E

No Preview Available !

IRGP30B120KD-E
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
P a ra m e te r
V (BR)CES
Collector-to-Em itter Breakdown Voltage
V (BR )CE S / T j T em p e ra tu re C o e ff. o f B re a kd o wn V o lta g e
M in .
1200
V CE(on)
Collector-to-Em itter Saturation
V o lta g e
www.DataSheeVt4GUE.(ctho) m
V G E (th) / T j
g fe
G ate Threshold Voltage
Tem perature Coeff. of Threshold Voltage
Forward Transconductance
4 .0
1 4 .8
IC E S
Zero G ate Voltage Collector Current
V FM
Diode Forward Voltage Drop
IG E S
G ate-to-Em itter Leakage Current
Typ.
+1.2
2 .2 8
2 .4 6
3 .4 3
2 .7 4
2 .9 8
5 .0
- 1.2
1 6 .9
325
1 .7 6
1 .8 6
1 .8 7
2 .0 1
Max. Units
C o n d itio n s
2 .4 8
V
V /°C
V GE = 0 V ,Ic =2 50 µ A
V GE = 0 V , Ic = 1 m A ( 2 5 -1 2 5 oC )
IC = 25A , V GE = 15V
2 .6 6
IC = 30A , V GE = 15V
4.00 V IC = 60A , V GE = 15V
3 .1 0
IC = 25A , V GE = 15V , TJ = 125°C
3 .3 5
IC = 30A , V GE = 15V , TJ = 125°C
6 .0
1 9 .0
V
m V/oC
S
V CE = V GE, IC = 25 0 µ A
V CE = V GE, IC = 1 m A ( 2 5 -1 2 5 oC )
V CE = 50 V , IC = 25 A , P W =80 µ s
250
VGE = 0V,VCE = 1200V
675 µA VGE = 0v, VCE = 1200V, TJ =125°C
2000
VGE = 0v, VCE = 1200V, TJ =150°C
2 .0 6
IC = 25A
2.17 V IC = 30A
2 .1 8
IC = 25A , TJ = 125°C
2 .4 0
IC = 30A , TJ = 125°C
±100 nA VGE = ±20V
F ig .
5, 6
7, 9
10
11
9,10,11,12
8
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
P a ra m e te r
Min. Typ. Max. Units
C o n d itio n s
F ig .
Qg
Q ge
Q gc
E on
E off
E tot
E on
E off
E tot
td (o n )
tr
td(off)
tf
Total Gate charge (turn-on)
G ate - Em itter Charge (turn-on)
G ate - Collector Charge (turn-on)
Turn-O n Switching Loss
Turn-O ff Switching Loss
Total Switching Loss
Turn-on Switching Loss
Turn-off Switching Loss
Total Switching Loss
Turn - on delay tim e
Rise tim e
Turn - off delay tim e
Fall tim e
169
19
82
1066
1493
254
29
123
1250
1800
2559 3050
1660 1856
2118 2580
3778 4436
50 65
25 35
210 230
60 75
IC = 25A
nC VCC =600V
VGE = 15V
IC = 25A , V CC = 600V
µ J V GE = 1 5 V , R g = 5 Ω, L =200µH
TJ = 25oC, Energy losses include tail
and diode reverse recovery
Ic =2 5A , V CC=6 00 V
µ J V GE = 1 5 V , R g = 5 Ω, L =200µH
TJ = 125oC, Energy losses include tail
and diode reverse recovery
Ic =2 5A , V CC=6 00 V
n s V GE = 1 5 V , R g = 5 Ω, L =200µH
T J = 12 5 oC ,
23
CT 1
CT 4
WF1
WF2
13, 15
CT 4
WF1 & 2
14, 16
CT 4
WF1
WF2
C ies
C oes
C res
RBSOA
Input Capacitance
O utput Capacitance
Reverse Transfer Capacitance
Reverse bias safe operating area
SCSOA
Short Circuit Safe O perating Area
E rec
Reverse recovery energy of the diode
trr Diode Reverse recovery tim e
Irr Peak Rev erse Recov ery Current
Le Internal Em itter Inductance
2200
210
85
FULL SQUARE
10 ---- ----
1820
300
34
13
2400
38
VGE = 0V
pF VCC = 30V
f = 1.0 MHz
TJ =1 50 oC , Ic = 1 2 0A
VCC = 1000V, VP = 1200V
R g = 5 , V GE = + 1 5 V to 0 V
T J = 15 0 oC
µs VCC = 900V,VP = 1200V
R g = 5 , V GE = + 1 5 V to 0 V
µ J T J = 12 5 oC
n s V CC = 60 0 V , Ic = 25 A
A V GE = 1 5 V , R g = 5 Ω, L =200µH
nH M easured 5 m m from the package.
22
4
CT 2
CT 3
WF4
17,18,19
20, 21
CT 4, WF3
2 www.irf.com


Part Number GP30B120KD-E
Description IRGP30B120KD-E
Maker International Rectifier
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GP30B120KD-E Datasheet PDF






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