GP30B120KD-E Overview
PD- 93818 IRGP30B120KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
GP30B120KD-E Key Features
- Low VCE(on) Non Punch Through (NPT) Technology
- Low Diode VF (1.76V Typical @ 25A & 25°C)
- 10 µs Short Circuit Capability
- Square RBSOA
- Ultrasoft Diode Recovery Characteristics
- Positive VCE(on) Temperature Coefficient
- Extended Lead TO-247AD Package
- Benchmark Efficiency for Motor Control