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GP30B120KD-E - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

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Datasheet Details

Part number: GP30B120KD-E
Manufacturer: International Rectifier
File Size: 168.17 KB
Datasheet: GP30B120KD-E_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

GP30B120KD-E Product details

Features

Low VCE(on) Non Punch Through (NPT) Technology.
Low Diode VF (1.76V Typical @ 25A & 25°C) www. DataSheet4U. com.
10 µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Recovery Characteristics.
Positive VCE(on) Temperature Coefficient.
Extended Lead TO-247AD Package C Motor Control Co-Pack IGBT VCES = 1200V G E VCE(on) typ. = 2.28V VGE = 15V, IC = 25A, 25°C N-channel Benefits.
Benchmark Efficiency for Motor Contro.

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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