GP30B120KD-E Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: PD- 93818 IRGP30B120KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

Datasheet Details

Part number	GP30B120KD-E
Manufacturer	International Rectifier (now Infineon)
File Size	168.17 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	GP30B120KD-E_InternationalRectifier.pdf

Key Features

Low VCE(on) Non Punch Through (NPT) Technology.
Low Diode VF (1.76V Typical @ 25A & 25°C) www. DataSheet4U. com.
10 µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Recovery Characteristics.
Positive VCE(on) Temperature Coefficient.
Extended Lead TO-247AD Package C Motor Control Co-Pack IGBT VCES = 1200V G E VCE(on) typ. = 2.28V VGE = 15V, IC = 25A, 25°C N-channel Benefits.
Benchmark Efficiency for Motor Contro.

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More Datasheets from International Rectifier (now Infineon)

Part Number	Description
GP30B120KD-EP	INSULATED GATE BIPOLAR TRANSISTOR
GP30B60KD-E	IRGP30B60KD-E