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GP30B120KD-EP - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Low VCE(on) Non Punch Through (NPT) Technology.
  • Low Diode VF (1.76V Typical @ 25A & 25°C).
  • 10 μs Short Circuit Capability.
  • Square RBSOA.
  • Ultrasoft Diode Recovery Characteristics.
  • Positive VCE(on) Temperature Coefficient.
  • Extended Lead TO-247AD Package.
  • Lead-Free C G E N-channel VCES = 1200V VCE(on) typ. = 2.28V VGE = 15V, IC = 25A, 25°C C Benefits.
  • Benchmark Efficiency for Motor Control.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
GP30B120KD-E INSULATED GATE BIPOLAR TRANSISTOR
GP30B60KD-E IRGP30B60KD-E

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRGP30B120KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT Features • Low VCE(on) Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 μs Short Circuit Capability • Square RBSOA • Ultrasoft Diode Recovery Characteristics • Positive VCE(on) Temperature Coefficient • Extended Lead TO-247AD Package • Lead-Free C G E N-channel VCES = 1200V VCE(on) typ. = 2.