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International Rectifier Electronic Components Datasheet

GP30B120KD-EP Datasheet

IRGP30B120KD-EP

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PD- 95238
IRGP30B120KD-EP
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Motor Control Co-Pack IGBT
Features
• Low VCE(on) Non Punch Through (NPT)
Technology
• Low Diode VF (1.76V Typical @ 25A & 25°C)
www.DataSheet41U0.cµosmShort Circuit Capability
• Square RBSOA
• Ultrasoft Diode Recovery Characteristics
• Positive VCE(on) Temperature Coefficient
• Extended Lead TO-247AD Package
• Lead-Free
Benefits
• Benchmark Efficiency for Motor Control
Applications
• Rugged Transient Performance
• Low EMI
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation
• Longer leads for Easier Mounting
C
G
E
nN--cchhaannel
VCES = 1200V
VCE(on) typ. = 2.28V
VGE = 15V, IC = 25A, 25°C
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current (Fig.1)
Continuous Collector Current (Fig.1)
Pulsed Collector Current (Fig.3, Fig. CT.5)
Clamped Inductive Load Current(Fig.4, Fig. CT.2)
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation (Fig.2)
Maximum Power Dissipation (Fig.2)
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw.
TO-247AD
Max.
1200
60
30
120
120
30
120
± 20
300
120
-55 to + 150
300, (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
ZθJC
www.irf.com
Parameter
Min.
Junction-to-Case - IGBT
–––
Junction-to-Case - Diode
–––
Case-to-Sink, flat, greased surface
–––
Junction-to-Ambient, typical socket mount
–––
Weight
–––
Transient Thermal Impedance Junction-to-Case (Fig.24)
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.42
0.83
–––
40
–––
Units
°C/W
g (oz)
1
7/27/04


International Rectifier Electronic Components Datasheet

GP30B120KD-EP Datasheet

IRGP30B120KD-EP

No Preview Available !

IRGP30B120KD-EP
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)CES
Collector-to-Emitter Breakdown Voltage
V(BR)CES / Tj Temperature Coeff. of Breakdown Voltage
Min.
1200
VCE(on)
Collector-to-Emitter Saturation
Voltage
www.DataSheetV4UGE.c(toh)m
VGE(th) / Tj
gfe
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
4.0
14.8
ICES
Zero Gate Voltage Collector Current
VFM
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
Typ.
+1.2
2.28
2.46
3.43
2.74
2.98
5.0
- 1.2
16.9
325
1.76
1.86
1.87
2.01
Max. Units
Conditions
2.48
V VGE = 0V,Ic =250 µA
V/°C VGE = 0V, Ic = 1 mA ( 25 -125 oC )
IC = 25A, VGE = 15V
2.66
IC = 30A, VGE = 15V
4.00 V IC = 60A, VGE = 15V
3.10
3.35
IC = 25A, VGE = 15V, TJ = 125°C
IC = 30A, VGE = 15V, TJ = 125°C
6.0
19.0
V
mV/oC
S
VCE = VGE, IC = 250 µA
VCE = VGE, IC = 1 mA ( 25 -125 oC )
VCE = 50V, IC = 25A, PW=80µs
250
VGE = 0V,VCE = 1200V
675 µA VGE = 0v, VCE = 1200V, TJ =125°C
2000
2.06
VGE = 0v, VCE = 1200V, TJ =150°C
IC = 25A
2.17 V IC = 30A
2.18
IC = 25A, TJ = 125°C
2.40
IC = 30A, TJ = 125°C
±100 nA VGE = ±20V
Fig.
5, 6
7, 9
10
11
9 ,10,11,1 2
8
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Fig.
Qg
Qge
Qgc
Eon
Eoff
Etot
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Total Gate charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-on Switching Loss
Turn-off Switching Loss
Total Switching Loss
Turn - on delay time
Rise time
Turn - off delay time
Fall time
169
19
82
1066
1493
254
29
123
1250
1800
2559 3050
1660 1856
2118 2580
3778 4436
50
25
210
60
65
35
230
75
IC = 25A
nC VCC =600V
VGE = 15V
IC = 25A, VCC = 600V
µJ VGE = 15V, Rg = 5Ω, L =200µH
TJ = 25oC, Energy losses include tail
and diode reverse recovery
Ic =25A, VCC=600V
µJ VGE = 15V, Rg = 5Ω, L =200µH
TJ = 125oC, Energy losses include tail
and diode reverse recovery
Ic =25A, VCC=600V
ns VGE = 15V, Rg = 5Ω, L =200µH
TJ = 125oC,
23
CT 1
CT 4
WF1
WF2
13, 15
CT 4
WF1 & 2
14, 16
CT 4
WF1
WF2
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RBSOA Reverse bias safe operating area
SCSOA Short Circuit Safe Operating Area
Erec
trr
Reverse recovery energy of the diode
Diode Reverse recovery time
Irr Peak Reverse Recovery Current
Le Internal Emitter Inductance
2200
210
85
FULL SQUARE
10 ---- ----
1820
300
34
13
2400
38
VGE = 0V
pF VCC = 30V
f = 1.0 MHz
TJ =150oC, Ic = 120A
VCC = 1000V, VP = 1200V
Rg = 5, VGE = +15V to 0 V
TJ = 150oC
µs VCC = 900V,VP = 1200V
Rg = 5, VGE = +15V to 0 V
µJ TJ = 125oC
ns VCC = 600V, Ic = 25A
A VGE = 15V, Rg = 5Ω, L =200µH
nH Measured 5 mm from the package.
22
4
CT 2
CT 3
WF4
17,18,1 9
20, 21
CT 4 , WF3
2 www.irf.com


Part Number GP30B120KD-EP
Description IRGP30B120KD-EP
Maker International Rectifier
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GP30B120KD-EP Datasheet PDF






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