Part GP30B120KD-EP
Description INSULATED GATE BIPOLAR TRANSISTOR
Category Transistor
Manufacturer International Rectifier
Size 293.69 KB
International Rectifier
GP30B120KD-EP

Overview

  • Low VCE(on) Non Punch Through (NPT) Technology
  • Low Diode VF (1.76V Typical @ 25A & 25°C)
  • 10 μs Short Circuit Capability
  • Square RBSOA
  • Ultrasoft Diode Recovery Characteristics
  • Positive VCE(on) Temperature Coefficient
  • Extended Lead TO-247AD Package
  • Lead-Free C G E N-channel VCES = 1200V VCE(on) typ. = 2.28V VGE = 15V, IC = 25A, 25°C C Benefits
  • Benchmark Efficiency for Motor Control Applications
  • Rugged Transient Performance