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International Rectifier Electronic Components Datasheet

GP30B60KD-E Datasheet

IRGP30B60KD-E

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PD - 94388B
IRGP30B60KD-E
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• TO-247AD Package
Benefits
• Benchmark Efficiency for Motor Control.
C
G
E
n-channel
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
VCES = 600V
IC = 30A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.95V
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current 
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
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TO-247AD
Max.
600
60
30
120
120
60
30
120
±20
304
122
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6.0
Max.
0.41
1.32
–––
40
–––
Units
°C/W
g
1
02/27/06


International Rectifier Electronic Components Datasheet

GP30B60KD-E Datasheet

IRGP30B60KD-E

No Preview Available !

IRGP30B60KD-E
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 500µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ––– 0.4 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C)
VCE(on)
Collector-to-Emitter Saturation Voltage ––– 1.95 2.35 V IC = 30A, VGE = 15V
5,6,7
––– 2.40 2.75
IC = 30A,VGE = 15V,
TJ = 150°C 9,10,11
VGE(th)
Gate Threshold Voltage
3.5 4.5 5.5 V VCE = VGE, IC = 250µA
9,10,11
VGE(th)/TJ Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C) 12
gfe Forward Transconductance
––– 18 ––– S VCE = 50V, IC = 50A, PW=80µs
ICES Zero Gate Voltage Collector Current ––– 5.0 250 µA VGE = 0V, VCE = 600V
––– 1000 2000
VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop
––– 1.30 1.55 V
––– 1.25 1.50
IF = 30A
IF = 30A
TJ = 150°C
8
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
Qg
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Cies
Coes
Cres
RBSOA
SCSOA
Erec
trr
Irr
Total Gate Charge (turn-on)
––– 102 153
IC = 30A
23
Gate - Emitter Charge (turn-on)
––– 14 21 nC VCC = 400V
CT.1
Gate - Collector Charge (turn-on)
––– 44 66
VGE = 15V
Turn-On Switching Loss
––– 350 620 µJ IC = 30A, VCC = 400V
Turn-Off Switching Loss
Total Switching Loss
––– 825 955
––– 1175 1575
VGE =15V, RG = 10Ω, L=200µH,
LS = 150nH
TJ = 25°C ‚
CT.4
Turn-On Delay Time
Rise Time
––– 46 60
––– 28 39
IC = 30A, VCC = 400V
VGE = 15V, RG = 10L =200µH
CT.4
Turn-Off Delay Time
––– 185 200 ns LS = 150nH, TJ = 25°C
Fall Time
––– 31 40
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
––– 635 1085
IC = 30A, VCC = 400V
CT.4
––– 1150 1350 µJ VGE = 15V,RG = 10Ω, L =200µH
13,15
––– 1785 2435
LS = 150nH
TJ = 150°C ‚ WF1,WF2
Turn-On Delay Time
––– 46 60
IC = 30A, VCC = 400V
CT.4
Rise Time
––– 28 39
VGE = 15V, RG = 10L =200µH
14, 16
Turn-Off Delay Time
––– 205 235 ns LS = 150nH, TJ = 150°C
WF1,WF2
Fall Time
––– 32 42
Input Capacitance
Output Capacitance
––– 1750 –––
––– 160 –––
VGE = 0V
pF VCC = 30V
22
Reverse Transfer Capacitance
––– 60 –––
f = 1.0MHz
Reverse Bias Safe Operting Area
FULL SQUARE
TJ = 150°C, IC = 120A, Vp =600V
4
VCC = 500V, VGE = +15V to 0V, RG=10CT.2
Short Circuit Safe Operting Area
10
––– –––
µs
TJ = 150°C, Vp =600V, RG = 10
VCC = 360V, VGE = +15V to 0V
Reverse Recovery energy of the diode ––– 925 1165 µJ TJ = 150°C
Diode Reverse Recovery time
––– 125 ––– ns VCC = 400V, IF = 30A, L = 200µH
Diode Peak Reverse Recovery Current ––– 43 48 A VGE = 15V,RG = 10Ω, LS = 150nH
CT.3
WF.4
17,18,19
20,21
CT.4,WF.3
Notes:  VCC = 80% (VCES), VGE = 15V, L = 28µH, RG = 22Ω.
2
‚ Energy losses include "tail" and diode reverse recovery.
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Part Number GP30B60KD-E
Description IRGP30B60KD-E
Maker International Rectifier
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GP30B60KD-E Datasheet PDF






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