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PD - 94388B
IRGP30B60KD-E
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • TO-247AD Package
Benefits
• Benchmark Efficiency for Motor Control.
C
G E
n-channel
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
VCES = 600V IC = 30A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ. = 1.