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International Rectifier Electronic Components Datasheet

GP50B60PD1 Datasheet

SMPS IGBT

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SMPS IGBT
PD - 94625B
IRGP50B60PD1
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
Applications
Telecom and Server SMPS
PFC and ZVS SMPS Circuits
Uninterruptable Power Supplies
Consumer Electronics Power Supplies
Features
NPT Technology, Positive Temperature Coefficient
Lower VCE(SAT)
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability
Benefits
Parallel Operation for Higher Current Applications
Lower Conduction Losses and Switching Losses
Higher Switching Frequency up to 150kHz
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.00V
@ VGE = 15V IC = 33A
Equivalent MOSFET
Parameters
RCE(on) typ. = 61m
ID (FET equivalent) = 50A
E
C
G
TO-247AC
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFRM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
dClamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
eMaximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
1
Max.
600
75
45
150
150
40
15
60
±20
390
156
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6.0 (0.21)
Max.
0.32
1.7
–––
40
–––
Units
°C/W
g (oz)
www.irf.com
1/25/06


International Rectifier Electronic Components Datasheet

GP50B60PD1 Datasheet

SMPS IGBT

No Preview Available !

IRGP50B60PD1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600 — — V VGE = 0V, IC = 500µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
— 0.31 — V/°C VGE = 0V, IC = 1mA (25°C-125°C)
RG Internal Gate Resistance
— 1.7 — 1MHz, Open Collector
— 2.00 2.35
IC = 33A, VGE = 15V
VCE(on)
Collector-to-Emitter Saturation Voltage
— 2.45 2.85 V IC = 50A, VGE = 15V
— 2.60 2.95
IC = 33A, VGE = 15V, TJ = 125°C
— 3.20 3.60
IC = 50A, VGE = 15V, TJ = 125°C
VGE(th)
Gate Threshold Voltage
3.0 4.0 5.0 V IC = 250µA
VGE(th)/TJ Threshold Voltage temp. coefficient
— -10 — mV/°C VCE = VGE, IC = 1.0mA
gfe Forward Transconductance
— 41 — S VCE = 50V, IC = 33A, PW = 80µs
ICES Collector-to-Emitter Leakage Current
— 5.0 500 µA VGE = 0V, VCE = 600V
— 1.0 — mA VGE = 0V, VCE = 600V, TJ = 125°C
VFM Diode Forward Voltage Drop
— 1.30 1.70 V IF = 15A, VGE = 0V
— 1.20 1.60
IF = 15A, VGE = 0V, TJ = 125°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V, VCE = 0V
Ref.Fig
4, 5,6,8,9
7,8,9
10
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge (turn-on)
— 205 308
IC = 33A
Qgc Gate-to-Collector Charge (turn-on)
— 70 105 nC VCC = 400V
Qge Gate-to-Emitter Charge (turn-on)
— 30 45
VGE = 15V
Eon Turn-On Switching Loss
— 255 305
IC = 33A, VCC = 390V
Eoff
Etotal
Turn-Off Switching Loss
Total Switching Loss
fÃ× 375 445 µJ VGE = +15V, RG = 3.3, L = 200µH
— 630 750
TJ = 25°C
td(on)
Turn-On delay time
— 30 40
IC = 33A, VCC = 390V
tr
td(off)
Rise time
Turn-Off delay time
— 10 15 ns VGE = +15V, RG = 3.3, L = 200µH
— 130 150
TJ = 25°C fÃÃ
tf Fall time
— 11 15
Eon Turn-On Switching Loss
— 580 700
IC = 33A, VCC = 390V
Eoff
Etotal
Turn-Off Switching Loss
Total Switching Loss
— 480 550 µJ VGE = +15V, RG = 3.3, L = 200µH
— 1060 1250
fTJ = 125°C
td(on)
Turn-On delay time
— 26 35
IC = 33A, VCC = 390V
tr
td(off)
Rise time
Turn-Off delay time
— 13 20 ns VGE = +15V, RG = 3.3, L = 200µH
— 146 165
TJ = 125°CÃfÃÃ
tf Fall time
— 15 20
Cies Input Capacitance
— 3648 —
VGE = 0V
Coes Output Capacitance
— 322 —
VCC = 30V
Cres
Coes eff.
Coes eff. (ER)
Reverse Transfer Capacitance
gEffective Output Capacitance (Time Related)
gEffective Output Capacitance (Energy Related)
— 56 — pF f = 1Mhz
— 215 —
VGE = 0V, VCE = 0V to 480V
— 163 —
TJ = 150°C, IC = 150A
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 480V, Vp =600V
Rg = 22, VGE = +15V to 0V
trr Diode Reverse Recovery Time
— 42 60 ns TJ = 25°C IF = 15A, VR = 200V,
— 74 120
TJ = 125°C di/dt = 200A/µs
Qrr Diode Reverse Recovery Charge
— 80 180 nC TJ = 25°C IF = 15A, VR = 200V,
— 220 600
TJ = 125°C di/dt = 200A/µs
Irr Peak Reverse Recovery Current
— 4.0 6.0 A TJ = 25°C IF = 15A, VR = 200V,
— 6.5 10
TJ = 125°C di/dt = 200A/µs
Ref.Fig
17
CT1
CT3
CT3
CT3
11,13
WF1,WF2
CT3
12,14
WF1,WF2
16
15
3
CT2
19
21
19,20,21,22
CT5
Notes:
 RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 2.00V and IC =33A. ID (FET Equivalent) is the equivalent MOSFET ID
rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
‚ VCC = 80% (VCES), VGE = 20V, L = 28 µH, RG = 22 Ω.
ƒ Pulse width limited by max. junction temperature.
„ Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
… Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.
Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.
2 www.irf.com


Part Number GP50B60PD1
Description SMPS IGBT
Maker International Rectifier
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