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International Rectifier Electronic Components Datasheet

GPS40B120UD Datasheet

Insulated Gate Bipolar Transistor

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PD- 94240A
IRGPS40B120UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
UltraFast Co-Pack IGBT
Features
• Non Punch Through IGBT Technology.
www.DataSheet4U.com • Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Super-247 Package.
Benefits
• Benchmark Efficiency for Motor Control.
C
G
E
N-channel
VCES = 1200V
VCE(on) typ. = 3.12V
@ VGE = 15V,
ICE = 40A, Tj=25°C
• Rugged Transient Performance.
• Low EMI.
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
DataSheet4U.com
Super-247™
Max.
VCES
Collector-to-Emitter Voltage
1200
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
80
40
160
160
80
40
160
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
± 20
595
238
-55 to +150
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Le
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Internal Emitter Inductance (5mm from package)
www.irf.com
Min.
–––
–––
–––
–––
20 (2)
–––
–––
Typ.
–––
–––
0.24
–––
–––
6.0 (0.21)
13
Max.
0.20
0.83
–––
40
–––
–––
–––
DataSheet4U.com
Units
V
A
V
W
°C
Units
°C/W
N(kgf)
g (oz)
nH
1
8/18/04
DataShee
DataSheet4 U .com


International Rectifier Electronic Components Datasheet

GPS40B120UD Datasheet

Insulated Gate Bipolar Transistor

No Preview Available !

www.DataSheet4U.com
IRGPS40B120UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 ––– ––– V VGE = 0V, IC = 500µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
www.DataSheet4U.com
––– 0.40 ––– V/°C
––– 3.12 3.40
––– 3.39 3.70 V
––– 3.88 4.30
VGE = 0V, IC = 1.0mA, (25°C-125°C)
IC = 40A
VGE = 15V
IC = 50A
IC = 40A, TJ = 125°C
5, 6
7, 9
10
VGE(th)
VGE(th)/TJ
gfe
–––
Gate Threshold Voltage
4.0
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
–––
4.24
5.0
-12
30.5
4.70
6.0
––– mV/°C
––– S
IC = 50A, TJ = 125°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 1.0mA, (25°C-125°C)
VCE = 50V, IC = 40A, PW=80µs
11
9,10
11 ,12
ICES
Zero Gate Voltage Collector Current
––– ––– 500 µA VGE = 0V, VCE = 1200V
––– 420 1200
VGE = 0V, VCE = 1200V, TJ = 125°C
VFM Diode Forward Voltage Drop
––– 2.03 2.40
IC = 40A
––– 2.17 2.60 V IC = 50A
8
––– 2.26 2.68
––– 2.46 2.95
IC = 40A, TJ = 125°C
IC = 50A, TJ = 125°C
et4U.com
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
DataSMhine.etT4yUp..coMmax. Units
Conditions
Qg Total Gate Charge (turn-on)
––– 340 510
IC = 40A
Ref.Fig.
23
Qge Gate - Emitter Charge (turn-on)
––– 40 60 nC VCC = 600V
CT1
Qgc
Gate - Collector Charge (turn-on)
––– 165 248
VGE = 15V
Eon Turn-On Switching Loss
––– 1400 1750 µJ IC = 40A, VCC = 600V
CT4
Eoff Turn-Off Switching Loss
––– 1650 2050
VGE = 15V,RG = 4.7Ω, L =200µH
WF1
Etot Total Switching Loss
––– 3050 3800
Ls = 150nH
TJ = 25°C
WF2
Eon Turn-On Switching Loss
––– 1950 2300
TJ = 125°C
13,15
Eoff
Etot
td(on)
tr
td(off)
tf
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– 2200 2950 µJ Energy losses include "tail" and
––– 4150 5250
diode reverse recovery.
––– 76 99
––– 39 55
IC = 40A, VCC = 600V
VGE = 15V, RG = 4.7L =200µH
––– 332 365 ns Ls = 150nH, TJ = 125°C
––– 25 33
14, 16
CT4
WF1
WF2
Cies
Coes
Input Capacitance
Output Capacitance
––– 4300 –––
––– 330 –––
VGE = 0V
pF VCC = 30V
22
Cres
RBSOA
Reverse Transfer Capacitance
Reverse Bias Safe Operting Area
––– 160 –––
FULL SQUARE
f = 1.0MHz
TJ = 150°C, IC = 160A, Vp =1200V
VCC = 1000V, VGE = +15V to 0V
RG = 4.7
4
CT2
SCSOA
Erec
trr
Irr
Short Circuit Safe Operting Area
10 ––– –––
Reverse Recovery energy of the diode
Diode Reverse Recovery time
Diode Peak Reverse Recovery Current
––– 3346 –––
––– 180 –––
––– 50 –––
TJ = 150°C, Vp =1200V
µs VCC = 900V, VGE = +15V to 0V,
RG = 4.7
µJ TJ = 125°C
ns VCC = 600V, IF = 60A, L =200µH
A VGE = 15V,RG = 4.7Ω, Ls = 150nH
CT3
WF4
17,18,19
20, 21
CT4,WF3
2 www.irf.com
DataShee
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DataSheet4 U .com


Part Number GPS40B120UD
Description Insulated Gate Bipolar Transistor
Maker International Rectifier
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GPS40B120UD Datasheet PDF






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International Rectifier





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