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International Rectifier Electronic Components Datasheet

HFA08PB120 Datasheet

Ultrafast/ Soft Recovery Diode

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Bulletin PD -2.365 rev. B 11/00
HEXFREDTM
HFA08PB120
Ultrafast, Soft Recovery Diode
Features
• UltrafastRecovery
• UltrasoftRecovery
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• HigherFrequencyOperation
• ReducedSnubbing
• Reduced Parts Count
BASE
CATHODE
4
2
1
CATHODE
3
ANODE
2
VR = 1200V
VF (typ.)* = 2.4V
IF (AV) = 8.0A
Qrr (typ.)= 140nC
IRRM (typ.) = 4.5A
trr (typ.) = 28ns
di(rec) M /dt (typ.)*= 85A /µs
Description
International Rectifier's HFA08PB120 is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination of characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 8
amps continuous current, the HFA08PB120 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED
features combine to offer designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and heatsink
sizes. The HEXFRED HFA08PB120 is ideally suited for applications in power supplies and
power conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
TO-247AC (Modified)
Absolute Maximum Ratings
VR
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
* 125°C
Max
1200
8.0
130
32
73.5
29
- 55 to 150
Units
V
A
W
°C
1


International Rectifier Electronic Components Datasheet

HFA08PB120 Datasheet

Ultrafast/ Soft Recovery Diode

No Preview Available !

HFA08PB120
Bulletin PD-2.365 rev. B 11/00
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units Test Conditions
VBR Cathode Anode Breakdown 1200 - - V IR = 100µA
Voltage
VFM Max. Forward Voltage
IRM Max. Reverse Leakage
Current
CT Junction Capacitance
LS Series Inductance
- 2.6 3.3 V
- 3.4 4.3
- 2.4 3.1
- 0.31 10 µA
- 135 1000
- 11 20 pF
- 8.0 - nH
IF = 8.0A
IF = 16A
See Fig. 1
IF = 8.0A, TJ = 125°C
VR = VR Rated
See Fig. 2
TJ = 125°C, VR = 0.8 x VR RatedD R
VR = 200V Rated
See Fig. 3
Measured lead to lead 5mm from pkg body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units Test Conditions
trr Reverse Recovery Time
- 28 - ns IF = 1.0A, dif/dt = 200A/µs, VR = 30V
trr1 See Fig. 5, 10
- 63 95
TJ = 25°C
IF = 8.0A
trr2
- 106 160
TJ = 125°C
VR = 200V
IRRM1
Peak Recovery Current
- 4.5 8.0 A TJ = 25°C
di f /dt = 200A/µs
IRRM2
See Fig. 6
- 6.2 11
TJ = 125°C
Qrr1 Reverse Recovery Charge
- 140 380 nC TJ = 25°C
Qrr2 See Fig. 7
- 335 880
TJ = 125°C
di(rec)M /dt1 Peak Rate of Recovery
- 133 - A/µs TJ = 25°C
di(rec)M /dt2 Current During tb See Fig. 8 - 85 -
TJ = 125°C
Thermal - Mechanical Characteristics
Parameter
Tlead ! Lead Temperature
RthJC
Thermal Resistance, Junction to Case
RthJA " Thermal Resistance, Junction to Ambient
RthCS$ Thermal Resistance, Case to Heat Sink
Wt Weight
Mounting Torque
Min Typ
--
--
--
- 0.25
- 6.0
- 0.21
6.0 -
5.0 -
Max
300
1.7
40
-
-
-
12
10
Units
°C
k/W
g
(oz)
Kg-cm
lbf•in
! 0.063 in. from Case (1.6mm) for 10 sec
"#Typical Socket Mount
$ Mounting Surface, Flat, Smooth and Greased
2 www.irf.com


Part Number HFA08PB120
Description Ultrafast/ Soft Recovery Diode
Maker International Rectifier
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