HFA08TB120
Features
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- Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions
VR = 1200V VF (typ.)- = 2.4V IF (AV) = 8.0A Qrr (typ.)= 140n C
1 CATHODE
3 ANODE 2
IRRM (typ.) = 4.5A trr (typ.) = 28ns di(rec) M /dt (typ.)- = 85A /µs
Benefits
- Reduced RFI and EMI
- Reduced Power Loss in Diode and Switching Transistor
- Higher Frequency Operation
- Reduced Snubbing
- Reduced Parts Count
TO-220AC
Description
International Rectifier's HFA08TB120 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb bination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 8 amps continuous current, the HFA08TB120 is especially well suited for use as the panion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features...
