HFA08TB120S Datasheet | International Rectifier

Preliminary Data Sheet PD-20603 rev. A 01/99 HEXFRED Features • • • • • • Ultrafast, Soft Recovery Diode (K) BASE + 2 Benefits Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count (N/C) 3 _ (A) VR = 1200V VF(typ.)- = 2.4V IF(AV) = 8.0A Qrr (typ.)= 140n C IRRM (typ.) = 4.5A trr(typ.) = 28ns di(rec)M/dt (typ.)- = 85A/µs Description .. International Rectifier's HFA08TB120S is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it Features a superb bination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 8 amps continuous current, the HFA08TB120S is especially well suited for use as the panion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line Features extremely low values of peak recovery current (IRRM ) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED Features bine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, ponent count and heatsink sizes. The HEXFRED HFA08TB120S is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. D2...