HFA08TB120SPBF
Features
Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count
Benefits
Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free
N/C
VR = 1200V VF(typ.)- = 2.4V IF(AV) = 8.0A Qrr (typ.)= 140n C IRRM(typ.) = 4.5A
Anode trr(typ.) = 28ns di(rec)M/dt (typ.)- = 85A/µs
Description
International Rectifier's HFA08TB120S is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb bination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 8 amps continuous current, the HFA08TB120S is especially well suited for use as the panion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak...
