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International Rectifier Electronic Components Datasheet

HFA08TB120SPBF Datasheet

Soft Recovery Diode

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PD-96034
HFA08TB120SPbF
HEXFREDTM
Features
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions
• Lead-Free
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Ultrafast, Soft Recovery Diode
Base
Cathode
2
1
N/C
3
Anode
VR = 1200V
VF(typ.)* = 2.4V
IF(AV) = 8.0A
Qrr (typ.)= 140nC
IRRM(typ.) = 4.5A
trr(typ.) = 28ns
di(rec)M/dt (typ.)* = 85A/µs
Description
International Rectifier's HFA08TB120S is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 1200 volts and 8 amps continuous current, the HFA08TB120S
is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA08TB120S is ideally
suited for applications in power supplies and power conversion systems (such
as inverters), motor drives, and many other similar applications where high
speed, high efficiency is needed.
D2 Pak
Absolute Maximum Ratings
VR
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
1200
8.0
130
32
73.5
29
-55 to +150
Units
V
A
W
°C
* 125°C
www.irf.com
1
10/07/05


International Rectifier Electronic Components Datasheet

HFA08TB120SPBF Datasheet

Soft Recovery Diode

No Preview Available !

HFA08TB120SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
VBR Cathode Anode Breakdown Voltage 1200 ––– ––– V IR = 100µA
VFM Max Forward Voltage
––– 2.6 3.3
––– 3.4 4.3
IF = 8.0A
V IF = 16A
––– 2.4 3.1
IF = 8.0A, TJ = 125°C
IRM Max Reverse Leakage Current
––– 0.31 10 µA VR = VR Rated
––– 135 1000
TJ = 125°C, VR = 0.8 x VR RatedD Rated
CT Junction Capacitance
––– 11 20 pF VR = 200V
LS Series Inductance
––– 8.0 –––
nH
Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
di(rec)M/dt1
di(rec)M/dt2
Parameter
Reverse Recovery Time
See Fig. 5
Peak Recovery Current
See Fig. 6
Reverse Recovery Charge
See Fig. 7
Peak Rate of Fall of Recovery Current
During tb
See Fig. 8
Min. Typ. Max. Units
Test Conditions
––– 28 –––
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
––– 63 95 ns TJ = 25°C
––– 106 160
TJ = 125°C
IF = 8.0A
––– 4.5 8.0 A TJ = 25°C
––– 6.2 11
TJ = 125°C
VR = 200V
––– 140 380 nC TJ = 25°C
––– 335 880
TJ = 125°C
dif/dt = 200A/µs
––– 133 ––– A/µs TJ = 25°C
––– 85 –––
TJ = 125°C
Thermal - Mechanical Characteristics
Tlead
RthJC
RthJA
Wt

‚
Parameter
Lead Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Weight
 0.063 in. from Case (1.6mm) for 10 sec
‚ Typical Socket Mount
Min.
––––
––––
––––
––––
––––
Typ.
––––
––––
––––
2.0
0.07
Max.
300
1.7
40
––––
––––
Units
°C
K/W
g
(oz)
2 www.irf.com


Part Number HFA08TB120SPBF
Description Soft Recovery Diode
Maker International Rectifier
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HFA08TB120SPBF Datasheet PDF






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