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International Rectifier Electronic Components Datasheet

HFA08TB60 Datasheet

Ultrafast/ Soft Recovery Diode

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Bulletin PD -2.341 rev. A 11/00
HEXFREDTM
Features
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
HFA08TB60
Ultrafast, Soft Recovery Diode
BASE
CATHODE
4
2
1
CATHODE
3
ANODE
2
VR = 600V
VF(typ.)* = 1.4V
IF(AV) = 8.0A
Qrr (typ.)= 65nC
IRRM = 5.0A
trr(typ.) = 18ns
di(rec)M/dt (typ.) = 240A/µs
Description
International Rectifier's HFA08TB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 8 amps continuous current, the HFA08TB60 is
especially well suited for use as the companion diode for IGBTs and MOSFETs.
In addition to ultra fast recovery time, the HEXFRED product line features
extremely low values of peak recovery current (IRRM) and does not exhibit any
tendency to "snap-off" during the tb portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA08TB60 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor
drives, and many other similar applications where high speed, high efficiency
is needed.
TO-220AC
Absolute Maximum Ratings
VR
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
* 125°C
Max
600
8.0
60
24
36
14
- 55 to +150
Units
V
A
W
C
1
4/8/97


International Rectifier Electronic Components Datasheet

HFA08TB60 Datasheet

Ultrafast/ Soft Recovery Diode

No Preview Available !

HFA08TB60
Bulletin PD-2.341 rev. A 10/00
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
VBR Cathode Anode Breakdown Voltage 600
V IR = 100µA
1.4 1.7
IF = 8.0A
VFM Max Forward Voltage
1.7 2.1 V IF = 16A
See Fig. 1
1.4 1.7
IF = 8.0A, TJ = 125°C
IRM Max Reverse Leakage Current
0.3 5.0
100 500
µA
VR = VR Rated
See Fig. 2
TJ = 125°C, VR = 0.8 x VR RatedD Rated
CT Junction Capacitance
10 25 pF VR = 200V
See Fig. 3
LS Series Inductance
8.0
nH
Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
di(rec)M/dt1
di(rec)M/dt2
Parameter
Reverse Recovery Time
See Fig. 5, 6 & 16
Peak Recovery Current
See Fig. 7& 8
Reverse Recovery Charge
See Fig. 9 & 10
Peak Rate of Fall of Recovery Current
During tb
See Fig. 11 & 12
Min Typ Max Units
Test Conditions
18 IF = 1.0A, dif/dt = 200A/µs, VR = 30V
37 55 ns TJ = 25°C
55 90
TJ = 125°C
IF = 8.0A
3.5 5.0
4.5 8.0
A TJ = 25°C
TJ = 125°C
VR = 200V
65 138
124 360
nC
TJ = 25°C
TJ = 125°C
dif/dt = 200A/µs
240
210
A/µs
TJ = 25°C
TJ = 125°C
Thermal - Mechanical Characteristics
Tlead!
RthJC
RthJA"
RthCS#
Parameter
Lead Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
Wt Weight
Mounting Torque
! 0.063 in. from Case (1.6mm) for 10 sec
" Typical Socket Mount
# Mounting Surface, Flat, Smooth and Greased
Min
6.0
5.0
Typ Max Units
300 °C
3.5
80 K/W
0.5
2.0 g
0.07
(oz)
12 Kg-cm
10 lbf•in
2 www.irf.com


Part Number HFA08TB60
Description Ultrafast/ Soft Recovery Diode
Maker International Rectifier
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HFA08TB60 Datasheet PDF






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