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International Rectifier Electronic Components Datasheet

HFA16TB120 Datasheet

Ultrafast/ Soft Recovery Diode

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Bulletin PD -2.492 rev. A 11/00
HEXFREDTM
Features
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
HFA16TB120
Ultrafast, Soft Recovery Diode
BASE
CATHODE
4
2
1
CATHODE
3
ANODE
2
VR = 1200V
VF(typ.)* = 2.3V
IF(AV) = 16A
Qrr (typ.)= 260nC
IRRM(typ.) = 5.8A
trr(typ.) = 30ns
di(rec)M/dt (typ.)* = 76A/µs
Description
International Rectifier's HFA16TB120 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 1200 volts and 16 amps continuous current, the HFA16TB120
is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA16TB120
is ideally suited for applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other similar applications
where high speed, high efficiency is needed.
TO-220AC
Absolute Maximum Ratings
VR
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
* 125°C
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max
1200
16
190
64
151
60
-55 to +150
Units
V
A
°C
W
1


International Rectifier Electronic Components Datasheet

HFA16TB120 Datasheet

Ultrafast/ Soft Recovery Diode

No Preview Available !

HFA16TB120
Bulletin PD-2.492 rev. A 11/00
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
VBR Cathode Anode Breakdown Voltage 1200
V IR = 100µA
2.5 3.0
IF = 16A
VFM Max Forward Voltage
3.2 3.93 V IF = 32A
See Fig. 1
2.3 2.7
IF = 16A, TJ = 125°C
IRM Max Reverse Leakage Current
0.75 20
375 2000
µA
VR = VR Rated
See Fig. 2
TJ = 125°C, VR = 0.8 x VR RatedD Rated
CT Junction Capacitance
27 40 pF VR = 200V
See Fig. 3
LS Series Inductance
8.0
nH
Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
di(rec)M/dt1
di(rec)M/dt2
Reverse Recovery Time
See Fig. 5, 10
Peak Recovery Current
See Fig. 6
Reverse Recovery Charge
See Fig. 7
Peak Rate of Fall of Recovery Current
During tb
See Fig. 8
30
90 135
164 245
5.8 10
8.3 15
260 675
680 1838
120
76
ns
A
nC
A/µs
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
TJ = 25°C
TJ = 125°C
IF = 16A
TJ = 25°C
TJ = 125°C
VR = 200V
TJ = 25°C
TJ = 125°C
dif/dt = 200A/µs
TJ = 25°C
TJ = 125°C
Thermal - Mechanical Characteristics
Tlead!
RthJC
RthJA "
RthCS#
Wt
Parameter
Min Typ Max Units
Lead Temperature
300 °C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
0.50
0.83
80
K/W
Weight
Mounting Torque
2.0
0.07
6.0
5.0
g
(oz)
12 Kg-cm
10 lbf•in
! 0.063 in. from Case (1.6mm) for 10 sec
" Typical Socket Mount
# Mounting Surface, Flat, Smooth and Greased
2 www.irf.com


Part Number HFA16TB120
Description Ultrafast/ Soft Recovery Diode
Maker International Rectifier
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HFA16TB120 Datasheet PDF






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