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HFA200MD40C - Ultrafast/ Soft Recovery Diode

General Description

HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems.

An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions.

Key Features

  • HFA200MD40C Ultrafast, Soft Recovery Diode VR = 400V VF (typ. ).
  • = 0.9V IF(AV) = 200A Qrr (typ. ) = 330nC IRRM(typ. ) = 8.1A trr(typ. ) = 45ns di(rec)M/dt (typ. ).
  • = 270A/µs LUG LUG LUG.

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Full PDF Text Transcription (Reference)

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PD-2.450 rev. B 01/99 HEXFRED Features HFA200MD40C Ultrafast, Soft Recovery Diode VR = 400V VF (typ.)ƒ = 0.9V IF(AV) = 200A Qrr (typ.) = 330nC IRRM(typ.) = 8.1A trr(typ.) = 45ns di(rec)M/dt (typ.)ƒ = 270A/µs LUG LUG LUG TERMINAL TERMINAL TERMINAL CATHODE ANODE 2 ANODE 1 TM • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters Isolated Base Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications.