HFA32PA120C Datasheet | International Rectifier

Features - - - - - Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Ultrafast, Soft Recovery Diode per Leg VR = 1200V VF(typ.) = 2.3V IF(AV) = 16A Qrr (typ.)= 260n C Benefits - Reduced RFI and EMI - Reduced Power Loss in Diode and Switching Transistor - Higher Frequency Operation - Reduced Snubbing - Reduced Parts Count IRRM(typ.) = 5.8A trr(typ.) = 30ns Description International Rectifier's HFA32PA120C is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb bination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 16 amps continuous current, the HFA32PA120C is especially well suited for use as the panion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features bine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, ponent count and heatsink sizes. The HEXFRED HFA32PA120C is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. TO-247AC Absolute Maximum Ratings (per Leg) Parameter VR IF @ TC = 100°C IFSM IFRM PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Single Pulse Forward Current Maximum Repetitive Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max 1200 16 190 64 151 60 -55 to +150 Units V A °C W -...