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International Rectifier Electronic Components Datasheet

HFB50HI20 Datasheet

Soft Recovery Diode

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FRED
Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
• Hermetic
PD - 94324A
HFB50HI20
Ultrafast, Soft Recovery Diode
VR = 200V
IF(AV) = 50A
trr = 35ns
Description
These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power
conditioning systems. An extensive characterization of the recovery behavior for different values of current,
temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors
drives and other applications where switching losses are significant portion of the total losses.
Absolute Maximum Ratings
VR
IF(AV)
IFSM
PD @ TC = 25°C
TJ, TSTG
Parameter
Cathode to Anode Voltage
Continuous Forward Current,  TC = 87°C
Single Pulse Forward Current, ‚ TC = 25°C
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Note:  D.C. = 50% rect. wave
‚ 1/2 sine wave, 60 Hz , P.W. = 8.33 ms
Max.
200
50
450
167
-55 to +150
Units
V
A
W
°C
CASE STYLE
(ISOLATED BASE)
TO-259AA
CATHODE ANODE ANODE
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1
02/20/06
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International Rectifier Electronic Components Datasheet

HFB50HI20 Datasheet

Soft Recovery Diode

No Preview Available !

HFB50HI20
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
VBR
Cathode Anode Breakdown Voltage
200 — —
V IR = 100µA
VF Forward Voltage
— — 1.34
IF = 50A, TJ = -55°C „
See Fig. 1 ƒ
— 1.28
V
IF = 50A, TJ = 25°C „
See Fig. 2
— — 1.7
IF = 100A, TJ = 25°C „
— — 1.69
IF = 100A, TJ = 125°C „
IR Reverse Leakage Current
See Fig. 2 ƒ
— — 10 µA VR = VR Rated
— — 100 µA VR = VR Rated, TJ = 125°C
CT
Junction Capacitance, See Fig. 3
— — 330 pF VR = 200V
LS Series Inductance
— 8.7 —
nH Measured from anode lead to cathode
lead, 6 mm ( 0.025 in ) from package
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
di(rec)M/dt1
di(rec)M/dt2
Parameter
Min.
Reverse Recovery Time
Reverse Recovery Time
Peak Recovery Current
Reverse Recovery Charge
Peak Rate of Fall of Recovery Current —
During tb
Typ. Max. Units
Test Conditions
— 35 ns IF = 0.5A,VR = 30V, dif/dt = 300A/µs
42 — ns TJ = 25°C See Fig.
69 —
TJ = 125°C
5
IF = 50A
4.4 —
8.7 —
A TJ = 25°C See Fig.
A TJ = 125°C
6
VR = 160V
108 —
nC TJ = 25°C See Fig.
314 — nC TJ = 125°C
7 dif/dt = 200A/µs
390 — A/µs TJ = 25°C See Fig.
570 — A/µs TJ = 125°C
8
Thermal - Mechanical Characteristics
RthJC
Wt
Parameter
Junction-to-Case
Weight
Note:
ƒ Pulse Width < 300µs, Duty Cycle < 2%
„ Pins 2 and 3 externally tied together
2
Typ.
10.9
Max.
0.75
Units
°C/W
g
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Part Number HFB50HI20
Description Soft Recovery Diode
Maker International Rectifier
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HFB50HI20 Datasheet PDF






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