IP2010PBF Datasheet | International Rectifier

Features - - - - - - - - - - Input voltage range of 7V to 13.2V Output voltage range of 0.6V to 5.5V Output current up to 30A Benchmark peak and full load efficiency - no heat sink required Operation up to 3MHz Ultrafast, Pow IRtune TM gate driver Wireless, low noise flip-chip design Industry-standard TTL patible Enable and PWM inputs Small footprint LGA package (7.7mm x 6.5mm x 1.7mm) Pin patible with i P2011 Description The i P2010 is a fully optimized, high frequency power stage solution for synchronous buck applications utilizing IR’s Gallium Nitride (Ga N)based power device technology platform. The i P2010 integrates a highly sophisticated, ultra fast Pow IRtune driver IC matched to a multi-switch monolithic Ga N-based power device. These devices are mounted in a pletely wireless package platform to deliver higher efficiency and more than double the switching frequency of state-of-the-art silicon-based integrated power stage devices. With a switching capability up to 3MHz, the i P2010 enables designers to dramatically reduce the value and size of output capacitors and inductors where space is at premium. The device can also be configured to operate at a lower switching frequency for applications that require the highest possible efficiencies. High Frequency Ga N-Based Integrated Power Stage Applications - - Server, Storage and Net POL General DC/DC Converters Typical Application .irf....