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International Rectifier Electronic Components Datasheet

IPS0151 Datasheet

FULLY PROTECTED POWER MOSFET SWITCH

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Data Sheet No.PD60144-K
IPS0151(S)
FULLY PROTECTED POWER MOSFET SWITCH
Features
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
Description
The IPS0151/IPS0151S are fully protected three terminal
SMART POWER MOSFETs that feature over-current,
over-temperature, ESD protection and drain to source
active clamp.These devices combine a HEXFET®
POWER MOSFET and a gate driver. They offer full
protection and high reliability required in harsh envi-
ronments. The driver allows short switching times
and provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165oC
or when the drain current reaches 35A. The device
restarts once the input is cycled. The avalanche
capability is significantly enhanced by the active
clamp and covers most inductive load demagnetiza-
tions.
Product Summary
Rds(on)
V clamp
Ishutdown
Ton/Toff
25m(max)
50V
35A
1.5µs
Packages
3-Lead D2Pak
IPS0151S
Typical Connection
3-Lead TO-220
PS0151
Load
R in series
( if need ed ) IN
control
L o g ic sig n a l
(Refer to lead assignment for correct pin configuration)
www.irf.com
D
S
1


International Rectifier Electronic Components Datasheet

IPS0151 Datasheet

FULLY PROTECTED POWER MOSFET SWITCH

No Preview Available !

IPS0151(S)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard foot-
print with 70 µm copper thickness.
Symbol Parameter
Vds Maximum drain to source voltage
Vin Maximum Input voltage
Iin, max
Isd cont.
Maximum IN current
Diode max. continuous current (1)
rth=62oC/W IPS0151
rth=5oC/W IPS015135
rth=80oC/W IPS0151S
Isd pulsed Diode max. pulsed current (1)
Pd Maximum power dissipation(1)
(rth=62oC/W) IPS0151
(rth=80oC/W) IPS0151S
Min.
-0.3
-10
ESD1 Electrostatic discharge voltage (Human Body)
ESD2 Electrostatic discharge voltage (Machine Model)
T stor.
Tj max.
Tlead
Max. storage temperature
Max. junction temperature
Lead temperature (soldering, 10 seconds)
-55
-40
Thermal Characteristics
Symbol Parameter
Min.
Rth 1
Rth 2
Rth 1
Rth 2
Rth 3
Thermal resistance free air
Thermal resistance junction to case
Thermal resistance with standard footprint
Thermal resistance with 1" square footprint
Thermal resistance junction to case
Max.
47
7
+10
Units
V
mA
Test Conditions
2.8 TO220 free air
35 A TO220 with Rth=5oC/W
2.2 SMD220 Std footprint
45
2W
1.56
4 C=100pF, R=1500Ω,
kV
0.5 C=200pF, R=0Ω, L=10µH
150
+150
oC
300
Typ.
55
2
60
35
2
Max. Units Test Conditions
a TO-220
oC/W
D2PAK (SMD220)
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min. Max. Units
Vds (max) Continuous drain to source voltage
— 35
VIH High level input voltage
46
VIL Low level input voltage
0 0.5
Ids Continuous drain current
Tamb=85oC
(TAmbient = 85oC, IN = 5V, rth = 60oC/W, Tj = 125oC) IPS0151
— 4.3
(TAmbient = 85oC, IN = 5V, rth = 80oC/W, Tj = 125oC) IPS0151S
3.8
Rin Recommended resistor in series with IN pin
0.2 5
Tr-in (max) Max recommended rise time for IN signal (see fig. 2)
—1
Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V)
01
V
A
k
µS
kHz
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Application Notes.
2 www.irf.com


Part Number IPS0151
Description FULLY PROTECTED POWER MOSFET SWITCH
Maker International Rectifier
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IPS0151 Datasheet PDF






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