IPS0151S Datasheet | International Rectifier

Features - - - - - Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Product Summary Rds(on) V clamp Ishutdown Ton/Toff 25mΩ (max) 50V 35A 1.5µs Description The IPS0151/IPS0151S are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-temperature, ESD protection and drain to source active clamp.These devices bine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165o C or when the drain current reaches 35A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. Packages 3-Lead D2 Pak IPS0151S Typical Connection 3-Lead TO-220 PS0151 L o ad D IN c o n t ro l R in se rie s ( if n e e d e d ) L o g ic sig n a l (Refer to lead assignment for correct pin configuration) .irf. IPS0151(S) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25o C unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness. Symbol Parameter Vds Vin Iin, max Isd cont. Maximum drain to source voltage Maximum Input voltage Maximum IN current Diode max. continuous current (1) rth=62o C/W IPS0151 rth=5o C/W rth=80o C/W Isd pulsed Diode max. pulsed current (1) Pd Maximum power dissipation (1) Min. - -0.3 -10 - - - - - - - - -55 -40 - Max. 47 7 +10 2.8 35 2.2 45 2 1.56 4 0.5 150 +150 300 Units V m A Test Conditions TO220 free air A TO220 with Rth=5o C/W SMD220 Std footprint IPS015135 IPS0151S (rth=62 o C/W) IPS0151 (rth=80o C/W) IPS0151S ESD1 ESD2 T stor. Tj max. Tlead Electrostatic discharge voltage (Human Body)...