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International Rectifier Electronic Components Datasheet

IPS031R Datasheet

FULLY PROTECTED POWER MOSFET SWITCH

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Data Sheet No.PD60220
IPS031R
FULLY PROTECTED POWER MOSFET SWITCH
Features
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
Description
The IPS031R are fully protected three terminal SMART
POWER MOSFETs that feature over-current, over-tem-
perature, ESD protection and drain to source active
clamp.These devices combine a HEXFET® POWER
MOSFET and a gate driver. They offer full protection
and high reliability required in harsh environments.
The driver allows short switching times and provides
efficient protection by turning OFF the power MOSFET
when the temperature exceeds 165oC or when the
drain current reaches 14A. The device restarts once the
input is cycled. The avalanche capability is significantly
enhanced by the active clamp and covers most induc-
tive load demagnetizations.
Typical Connection
Product Summary
Rds(on)
V clamp
Ishutdown
Ton/Toff
60m(max)
50V
14A
1.5µs
Package
3-Lead D-Pak
Load
R in series
(if needed)
IN
"
Logic signal
(Refer to lead assignment for correct pin configuration)
www.irf.com
control !
D
S
1


International Rectifier Electronic Components Datasheet

IPS031R Datasheet

FULLY PROTECTED POWER MOSFET SWITCH

No Preview Available !

IPS031R
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard foot-
print with 70 µm copper thickness.
Symbol
Vds
Vin
Iin, max
Isd cont.
Parameter
Maximum drain to source voltage
Maximum input voltage
Maximum IN current
Diode max. continuous current (1)
rth=100oC/W
Min.
-0.3
-10
Max.
47
7
+10
Units
V
mA
Test Conditions
1.6 D-Pak Std footprint
rth=5oC/W
rth=50oC/W
Isd pulsed
Pd
Diode max. pulsed current (1)
Maximum power dissipation(1)
rth=50oC/W
rth=100oC/W
ESD1 Electrostatic discharge voltage (Human Body)
ESD2 Electrostatic discharge voltage (Machine Model)
T stor. Max. storage temperature
Tj max. Max. junction temperature
Tlead
Lead temperature (soldering, 10 seconds)
-55
-40
18 A
3
18
2.5
1.25
4
0.5
150
+150
300
W
kV
oC
D-Pak with Rth=5oC/W
D-Pak with sq. footprint
C=100pF, R=1500Ω,
C=200pF, R=0Ω, L=10µH
Thermal Characteristics
Symbol Parameter
Rth 1
Rth 2
Rth 3
Thermal resistance with standard footprint
Thermal resistance with 1" square footprint
Thermal resistance junction to case
Min.
Typ.
100
50
3
Max. Units Test Conditions
oC/W D-PAK
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min. Max. Units
Vds (max) Continuous drain to source voltage
VIH High level input voltage
VIL Low level input voltage
Ids Continuous drain current
Tamb=85oC
TAmbient = 85oC, IN = 5V, rth = 50oC/W, Tj = 125oC) 1" sq. footprint
TAmbient = 85oC, IN = 5V, rth = 100oC/W, Tj = 125oC) Std. footprint
Rin Recommended resistor in series with IN pin
Tr-in(max) Max recommended rise time for IN signal (see fig. 2)
Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V)
— 35
46
0 0.5
— 3.3
—2
0.2 5
—1
01
V
A
k
µS
kHz
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Application. Notes.
2 www.irf.com


Part Number IPS031R
Description FULLY PROTECTED POWER MOSFET SWITCH
Maker International Rectifier
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IPS031R Datasheet PDF






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