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International Rectifier Electronic Components Datasheet

IPS1011PBF Datasheet

INTELLIGENT POWER LOW SIDE SWITCH

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Data Sheet No. PD60235_B
IPS1011(S)(R)PbF
INTELLIGENT POWER LOW SIDE SWITCH
Features
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
ESD protection
Optimized Turn On/Off for EMI
Diagnostic on the input current
Description
The IPS1011(S)(R)PbF is a three terminal Intelligent
Power Switch (IPS) that features a low side MOSFET with
over-current, over-temperature, ESD protection and drain
to source active clamp. This device offers protections and
the high reliability required in harsh environments. The
switch provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165°C or
when the drain current reaches 85A. The device restarts
once the input is cycled. A serial resistance connected to
the input provides the diagnostic. The avalanche capability
is significantly enhanced by the active clamp and covers
most inductive load demagnetizations.
Product Summary
Rds(on) 13m(max.)
Vclamp
36V
Ishutdown 85A (typ.)
Packages
TO-220
D²Pak
D-Pak
IPS1011PbF IPS1011SPbF IPS1011RPbF
Typical Connection
+Bat
Input R
Input Signal
V Diag
Load
D2
1
Control
IN
S3
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International Rectifier Electronic Components Datasheet

IPS1011PBF Datasheet

INTELLIGENT POWER LOW SIDE SWITCH

No Preview Available !

IPS1011(S)(R)PbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to Ground lead. (Tambient=25°C unless otherwise specified).
Symbol Parameter
Min. Max. Units
Vds Maximum drain to source voltage
-0.3 36
V
Vds cont. Maximum continuous drain to source voltage
- 28 V
Vin Maximum input voltage
-0.3 6
V
Isd cont.
Max diode continuous current (limited by thermal dissipation)
5
A
Maximum power dissipation (internally limited by thermal protection)
Pd
Rth=5°C/W IPS1011
Rth=40°C/W IPS1011S 1” sqr. footprint
25
3.1
W
Rth=50°C/W IPS1011R 1” sqr. footprint
2.5
Electrostatic discharge voltage (Human body) C=100pF, R=1500
Between drain and source
4
ESD
Other combinations
Electrostatic discharge voltage (Machine Model) C=200pF,R=0
3 kV
Between drain and source
0.5
Other combinations
0.3
Tj max.
Max. storage & operating temperature junction temperature
-40 150
°C
Tsoldering Lead soldering temperature (10 seconds)
300 °C
Thermal Characteristics
Symbol
Parameter
Rth1
Thermal resistance junction to ambient IPS1011 TO-220 free air
Rth2
Thermal resistance junction to case IPS1011 TO-220
Rth1
Thermal resistance junction to ambient IPS1011S D²Pak std. footprint
Rth2
Thermal resistance junction to ambient IPS1011S D²Pak 1” sqr. footprint
Rth3
Thermal resistance junction to case IPS1011S D²Pak
Rth1
Thermal resistance junction to ambient IPS1011R D-Pak std. footprint
Rth2
Thermal resistance junction to ambient IPS1011R D-Pak 1” sqr. footprint
Rth3
Thermal resistance junction to case IPS1011R D-Pak
Typ.
50
1.2
60
40
1.2
70
50
1.2
Max.
Units
°C/W
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol
Parameter
Min. Max. Units
VIH High level input voltage
4.5 5.5
VIL Low level input voltage
0 0.5
Ids Continuous drain current, Tambient=85°C, Tj=125°C, Vin=5V
Rth=5°C/W IPS1011
18
A
Rth=40°C/W IPS1011S 1” sqr. Footprint
6.5
Rth=50°C/W IPS1011R 1” sqr. Footprint
6
Rin
Recommended resistor in series with IN pin to generate a diagnostic
0.5 10
k
Max L
Max recommended load inductance (including line inductance) (1)
5 µH
Max F
Max frequency (switching losses = conduction losses)
200 Hz
Max t rise
Max Input rising time
1 µs
(1) Higher inductance is possible if maximum load current is limited - see figure 11
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Part Number IPS1011PBF
Description INTELLIGENT POWER LOW SIDE SWITCH
Maker International Rectifier
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