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International Rectifier Electronic Components Datasheet

IPS521G Datasheet

FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH

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Data Sheet No.PD 60157-H
IPS521G
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
Features
Over temperature protection (with auto-restart)
Short-circuit protection (current limit)
Active clamp
E.S.D protection
Status feedback
Open load detection
Logic ground isolated from power ground
Description
The IPS521G is a fully protected five terminal high side
switch with built in short circuit, over-temperature, ESD
protection, inductive load capability and diagnostic
feedback. The output current is controlled when it
reaches Ilim value. The current limitation is activated
until the thermal protection acts. The over-tempera-
ture protection turns off the high side switch if the
junction temperature exceeds Tshutdown. It will au-
tomatically restart after the junction has cooled 7oC
below Tshutdown. A diagnostic pin is provided for
status feedback of short-circuit, over-temperature
and open load detection. The double level shifter
circuitry allows large offsets between the logic ground
and the load ground.
Typical Connection
Product Summary
Rds(on)
V clamp
I Limit
V open load
100m(max)
50V
10A
3V
Truth Table
Op. Conditions In Out
Normal
HH
Normal
LL
Open load
HH
Open load
LH
Over current
H L (limiting)
Over current
L
L
Over-temperature H L (cycling)
Over-temperature L
L
Package
Dg
H
L
H
H
L
L
L
L
+ 5v
15K
Status
feedback
Rdg
Dg
Rin
Logic
signal
In
+ VCC
Output pull-up resistor
Logic
control
Vcc
Out
Gnd
Load
Logic Gnd
Load Gnd
8 Lead SOIC
www.irf.com
1


International Rectifier Electronic Components Datasheet

IPS521G Datasheet

FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH

No Preview Available !

IPS521G
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to GROUND lead. (Tj = 25oC unless otherwise specified).
Symbol Parameter
Min.
Vout
Voffset
Vin
Iin, max
Maximum output voltage
Vcc-50
Maximum logic ground to load ground offset Vcc-50
Maximum Input voltage
-0.3
Maximum positive IN current
-5
Vdg Maximum diagnostic output voltage
-0.3
Idg, max
Isd cont.
Maximum diagnostic output current
Diode max. permanent current (1)
(rth = 125oC/W)
-1
Isd pulsed Diode max. pulsed current (1)
ESD1 Electrostatic discharge voltage (Human Body)
ESD2 Electrostatic discharge voltage (Machine Model)
Pd Maximum power dissipation(1)
(rth=125oC/W)
Tj max. Max. storage & operating junction temp.
-40
Vcc max. Maximum Vcc voltage
Max.
Vcc+0.3
Vcc+0.3
5.5
10
5.5
10
1.4
10
4
0.5
1
+150
50
Units
V
mA
V
mA
A
kV
W
oC
V
Test Conditions
C=100pF, R=1500Ω,
C=200pF, R=0Ω, L=10µH
Thermal Characteristics
Symbol Parameter
Rth1
Rth2
Thermal resistance with standard footprint
Thermal resistance with 1" square footprint
Min.
Typ. Max. Units Test Conditions

&
a
a oC/W 8 Lead SOIC
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min. Max. Units
Vcc Continuous Vcc voltage
VIH High level input voltage
VIL Low level input voltage
Iout Continuous output current
Tc=85oC
(TAmbient = 85oC, Tj = 125oC, Rth = 100oC/W)
Rin Recommended resistor in series with IN pin
Rdg Recommended resistor in series with DG pin
5.5 35
4 5.5
-0.3 0.9
— 1.6
46
10 20
V
A
k
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
2
www.irf.com


Part Number IPS521G
Description FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
Maker International Rectifier
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IPS521G Datasheet PDF






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