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IR082HD4C10U-P2 - HIGH VOLTAGE HALF BRIDGE

Download the IR082HD4C10U-P2 datasheet PDF. This datasheet also covers the IR062HD4C10U-P2 variant, as both devices belong to the same high voltage half bridge family and are provided as variant models within a single manufacturer datasheet.

General Description

The IR062HD4C10U-P2 / IR082HD4C10U-P2 are high voltage, high speed half bridges.

Proprietary HVIC and latch immune CMOS technologies, along with the power IGBT technology, enable ruggedized single package construction.

Key Features

  • Output Power IGBT’s in half-bridge configuration.
  • 575V rated breakdown voltage.
  • High side gate drive designed for bootstrap operation Product Summary VIN (max) PD (TA = 25°C) VCE(ON) typ 575V 3.0W 3.0V.
  • Matched propagation delay for both channels.
  • Independent high and low side output channels (IR062HD4C10U-P2) or cross-conduction prevention logic (IR082HD4C10U-P2).
  • Undervoltage lockout.
  • 3.3V, 5V and 15V input logic compatible.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IR062HD4C10U-P2_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IR01D214 (IR01H(D)xxx) HIGH VOLTAGE HALF BRIDGE
IR01D224 (IR01H(D)xxx) HIGH VOLTAGE HALF BRIDGE
IR01D420 (IR01H(D)xxx) HIGH VOLTAGE HALF BRIDGE
IR01H214 (IR01H(D)xxx) HIGH VOLTAGE HALF BRIDGE
IR01H224 (IR01H(D)xxx) HIGH VOLTAGE HALF BRIDGE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Preliminary Data Sheet No. PD60171-D IR062HD4C10U-P2 IR082HD4C10U-P2 HIGH VOLTAGE HALF BRIDGE Features • Output Power IGBT’s in half-bridge configuration • 575V rated breakdown voltage • High side gate drive designed for bootstrap operation Product Summary VIN (max) PD (TA = 25°C) VCE(ON) typ 575V 3.0W 3.0V • Matched propagation delay for both channels • Independent high and low side output channels (IR062HD4C10U-P2) or cross-conduction prevention logic (IR082HD4C10U-P2) • Undervoltage lockout • 3.3V, 5V and 15V input logic compatible • Metal heatsink back for improved PD Package Description The IR062HD4C10U-P2 / IR082HD4C10U-P2 are high voltage, high speed half bridges.