IR082HD4C10U-P2
Description
The IR062HD4C10U-P2 / IR082HD4C10U-P2 are high voltage, high speed half bridges. Proprietary HVIC and latch immune CMOS technologies, along with the power IGBT technology, enable ruggedized single package construction.
Key Features
- Output Power IGBT’s in half-bridge configuration
- 575V rated breakdown voltage
- High side gate drive designed for bootstrap operation Product Summary VIN (max) PD (TA = 25°C) VCE(ON) typ 575V 3.0W 3.0V
- Matched propagation delay for both channels
- Independent high and low side output channels (IR062HD4C10U-P2) or cross-conduction prevention logic (IR082HD4C10U-P2)
- Undervoltage lockout
- 3.3V, 5V and 15V input logic compatible
- Metal heatsink back for improved PD Package
