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IR082HD4C10U-P2 Datasheet HIGH VOLTAGE HALF BRIDGE

Manufacturer: International Rectifier (now Infineon)

Download the IR082HD4C10U-P2 datasheet PDF. This datasheet also includes the IR062HD4C10U-P2 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IR062HD4C10U-P2_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

General Description

The IR062HD4C10U-P2 / IR082HD4C10U-P2 are high voltage, high speed half bridges.

Proprietary HVIC and latch immune CMOS technologies, along with the power IGBT technology, enable ruggedized single package construction.

The logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V logic.

Overview

www.DataSheet4U.com Preliminary Data Sheet No.

PD60171-D IR062HD4C10U-P2 IR082HD4C10U-P2 HIGH VOLTAGE HALF.

Key Features

  • Output Power IGBT’s in half-bridge configuration.
  • 575V rated breakdown voltage.
  • High side gate drive designed for bootstrap operation Product Summary VIN (max) PD (TA = 25°C) VCE(ON) typ 575V 3.0W 3.0V.
  • Matched propagation delay for both channels.
  • Independent high and low side output channels (IR062HD4C10U-P2) or cross-conduction prevention logic (IR082HD4C10U-P2).
  • Undervoltage lockout.
  • 3.3V, 5V and 15V input logic compatible.

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